, InAlN/GaN HEMT Technology for Robust HF Receivers: an Overview of the HF and LF Noise Performances " International Conference on Noise and Fluctuation, ICNF 2015, X'Ian, China, vol.4
Highly rugged 30 GHz GaN low-noise amplifiers, IEEE Microwave and Wireless Components Lett, vol.19, issue.4, pp.251-253, 2009. ,
Robust AlGaN/GaN Low Noise Amplifier MMICs for C-, Ku-and Ka-band space applications, IEEE Compound Semiconductor Integrated Circuit Symposium, p.4, 2009. ,
GaN MMIC technology for microwave and millimeterwave applications, Proc. IEEE Compound Semiconductor Int. Circuits Symp. CSIC, pp.173-176, 2005. ,
A high survivable 3-7 GHz GaN Low-Noise Amplifiers, IEEE MTT-S Int. Dig, pp.1899-1902, 2006. ,
A Cband high-dynamic range GaN HEMT low-noise amplifier, IEEE Microwave Wireless Component Letters, vol.14, issue.6, pp.262-264, 2004. ,
Wide-band dualgate GaN HEMT low noise amplifier front-end receiver electronics, Proc. IEEE Compound Semiconductor Int. Circuits Symp. CSIC, pp.89-92, 2006. ,
Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: application to X-band low noise amplifiers, Proc. European Gallium Arsenide Other Semiconductors Appl. Symp. 2005, pp.229-232 ,
URL : https://hal.archives-ouvertes.fr/hal-00126458
Robust GaN HEMT low-noise amplifier MMICs for X-band applications, Proc. European Gallium Arsenide Other Semiconductors Appl. Symp, pp.71-74, 2004. ,
Temperature-dependence of a GaN-based HEMT monolithic X-band low-noise amplifier, Proc. IEEE Compound Semiconductor Int. Circuits Symp. CSIC, pp.201-204, 2004. ,
Wideband AlGaN/GaN HEMT MMIC low noise amplifier, IEEE MTT-S Int. Digest, pp.153-156, 2004. ,
InAlN barrier scaled devices for very high fT and lowvoltage RF applications, IEEE Trans. On Electron Devices, vol.60, issue.10, pp.3099-3104, 2013. ,
Ka-band Low Noise Amplifiers based on InAlN/GaN technologies, International Conference on Noise and Fluctuation, ICNF 2015, X'Ian, China, vol.4 ,
URL : https://hal.archives-ouvertes.fr/hal-01234061
BroadBand Frequency Dispersion Modeling of the Output Conductance and Transconductance in AlInN/GaN HEMTs, IEEE Transactions on Electron Devices, vol.60, pp.1372-1378, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-00859123
Lowfrequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures, Applied Physics Letters, vol.105, 2014. ,
URL : https://hal.archives-ouvertes.fr/hal-02088149
Diagnostic tools for accurate reliability investigations of GaN devices, International Conference on Noise and Fluctuations, pp.456-461, 2011. ,
URL : https://hal.archives-ouvertes.fr/hal-00907447
Degradation mechanism of PHEMT under large signal operation, IEEE GaAs Symposium, p.4, 2003. ,