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THERMAL BEHAVIOR OF SILICON CAPACITIVE PRESSURE SENSORS USING ELECTROSTATIC PRESSURE

Abstract : This paper presents two methods to characterize the thermal coefficient of pressure sensitivity without hydrostatic pressure measurements. These methods are then easier to implement because they only use electrostatic pressure. One model uses the thermal coefficient of capacity and the thermal coefficient of electrostatic pressure sensitivity. The second one is based on the thermal coefficient of capacity and on the thermal coefficient of fundamental resonance frequency. These two models have been validated between-20°C +150°C for circular silicon membrane manufactured with silicon/pyrex technology.
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https://hal.laas.fr/hal-02160510
Contributor : Philippe Menini Connect in order to contact the contributor
Submitted on : Wednesday, June 19, 2019 - 5:22:09 PM
Last modification on : Thursday, June 10, 2021 - 3:05:40 AM

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  • HAL Id : hal-02160510, version 1

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M Al Bahri, P Pons, Philippe Menini. THERMAL BEHAVIOR OF SILICON CAPACITIVE PRESSURE SENSORS USING ELECTROSTATIC PRESSURE. MicroMechanics Europe (MME), Sep 2009, Toulouse, France. ⟨hal-02160510⟩

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