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Ga doped ZnO thin films deposited by RF sputtering for NO2 sensing

Abstract : Ga doped ZnO thin films have been deposited by Radio-Frequency (RF) magnetron sputtering on fused silica substrates. The structural analysis of the n-type sensitive material showed a preferential orientation in the [00l] direction. The microstructure of the thin film indicated an increasing grain size with the increase of the thicknesses. The micro sensor platforms have been fabricated with ZnO:Ga thin film deposited using a reliable stencil mask onto interdigitated electrodes containing micro-hotplates. The as fabricated micro sensor allows to sense sub-ppm concentration (500 ppb) of nitric dioxide. This system reveals promising sensing performance with a sensitivity Rg/Ra up to 75 at low temperature (50 °C).
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Submitted on : Monday, July 15, 2019 - 6:47:54 PM
Last modification on : Thursday, June 10, 2021 - 3:03:02 AM


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  • HAL Id : hal-02172260, version 1


L. Presmanes, V. Gunasekaran, Y. Thimont, I. Sinnarasa, A. Barnabé, et al.. Ga doped ZnO thin films deposited by RF sputtering for NO2 sensing. The Experiment@ International Conference ('19), Jun 2019, Funchal, Portugal. ⟨hal-02172260⟩



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