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Links between bismuth incorporation and surface reconstruction for GaAsBi growth probed by in situ measurements

Clara Cornille 1 Alexandre Arnoult 2 Quentin Gravelier 2 Chantal Fontaine 1
1 LAAS-PHOTO - Équipe Photonique
LAAS - Laboratoire d'analyse et d'architecture des systèmes
2 LAAS-TEAM - Service Techniques et Équipements Appliqués à la Microélectronique
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : Bismuth incorporation and surface reconstruction have been studied simultaneously during GaAsBi growth by molecular beam epitaxy by means of in-situ wafer curvature monitoring and reflection high energy electron diffraction, respectively. Growth temperature and flux ratio have been varied successively. As/Ga atomic ratio close to the unity has been applied for the study of growth temperature effect. During the growth regime under the (1x3) reconstruction, Bi incorporation is found to be independent of the growth temperature, for temperatures where Bi desorption is insignificant. On the contrary, Bi incorporation becomes highly dependent on growth temperature as soon as the (2x1) reconstruction regime is reached. Only for the lower temperatures, the Bi incorporation gets to the same level during the (2x1) reconstruction than for the (1x3) reconstruction. When the As/Ga fux ratio is increased, bismuth incorporation is observed to decrease for GaAsBi growth in the (2x1) reconstruction regime. Our results indicate that the (1x3) and (2x1) surface reconstructions are always successively observed, and that an energy barrier has to overcome to transit from the (1x3) to the (2x1) reconstruction, this mechanism being temperature dependent. Finally, a difference in surface stress with reconstruction has been identified.
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https://hal.laas.fr/hal-02281696
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Submitted on : Monday, September 9, 2019 - 2:15:03 PM
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Clara Cornille, Alexandre Arnoult, Quentin Gravelier, Chantal Fontaine. Links between bismuth incorporation and surface reconstruction for GaAsBi growth probed by in situ measurements. Journal of Applied Physics, American Institute of Physics, 2019, Special Topic on Highly Mismatched Semiconductors Alloys: from Atoms to Devices, 126 (9), pp.093106. ⟨10.1063/1.5111932⟩. ⟨hal-02281696⟩

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