, Science, vol.42, pp.2074-2081, 1995.
Random telegraph signals in charge coupled devices, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol.530, pp.521-535, 2004. ,
Annealing of proton-induced random telegraph signal in CCDs, IEEE Transactions on Nuclear Science, vol.54, pp.1120-1128, 2007. ,
Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in cmos image sensors, IEEE Transactions on Nuclear Science, vol.58, pp.3085-3094, 2011. ,
Fractional contributions of microscopic diffusion mechanisms for common dopants and selfdiffusion in silicon, Journal of Applied Physics, vol.85, pp.6440-6446, 1999. ,
Defects in irradiated silicon: Electron paramagnetic resonance and electron-nuclear double resonance of the Si-E center, Phys. Rev, vol.134, pp.1359-1377, 1964. ,
Optical properties of group-V atom-vacancy pairs in silicon, Radiation Effects and Defects in Solids, vol.111, pp.487-500, 1989. ,
Understanding the Jahn-Teller distortions for the divacancy and the vacancy-group-V-atom pair in silicon, proceedings of the 23rd International Conference on Defects in Semiconductors, vol.376, pp.50-53, 2006. ,
First-principles study of the phosphorousvacancy pair in silicon, Computational Materials Science, vol.1, pp.351-357, 1993. ,
Ab initio EPR parameters for dangling-bond defect complexes in silicon: Effect of Jahn-Teller distortion, Phys. Rev. B, vol.85, p.195202, 2012. ,
Electronic structure of the phosphorus-vacancy complex in silicon: A resonant-bond model, Phys. Rev. B, vol.70, p.115204, 2004. ,
, Phys. Rev. Lett, vol.97, p.106402, 2006.
Vacancies and E-centers in silicon as multi-symmetry defects, eMRS 2008 Spring Conference Symposium K: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications, pp.107-111, 2009. ,
Charge state dependent Jahn-Teller distortions of the E-center defect in crystalline Si, Phys. Rev. Lett, vol.91, p.235503, 2003. ,
A climbing image nudged elastic band method for finding saddle points and minimum energy paths, The Journal of Chemical Physics, vol.113, pp.9901-9904, 2000. ,
Valence and atomic size dependent exchange barriers in vacancy-mediated dopant diffusion, Applied Physics Letters, vol.73, pp.247-249, 1998. ,
, Comput. Phys. Commun, vol.205, pp.106-131, 2016.
Optimized norm-conserving Vanderbilt pseudopotentials, Phys. Rev. B, vol.88, p.85117, 2013. ,
Generalized gradient approximation made simple, Phys. Rev. Lett, vol.77, pp.3865-3868, 1996. ,
Periodic boundary conditions in ab initio calculations, Phys. Rev. B, vol.51, pp.4014-4022, 1995. ,
Xcrysden-a new program for displaying crystalline structures and electron densities, Journal of Molecular Graphics and Modelling, vol.17, pp.176-179, 1999. ,
Effect of self-consistency on quasiparticles in solids, Phys. Rev. B, vol.74, p.45102, 2006. ,
URL : https://hal.archives-ouvertes.fr/hal-00104507
New method for calculating the one-particle Green's function with application to the electron-gas problem, Phys. Rev, vol.139, pp.796-823, 1965. ,
Effects of electron-electron and electronphonon interactions on the one-electron states of solids, pp.1-181, 1970. ,
Defect formation energies without the band-gap problem: Combining density-functional theory and the GW approach for the silicon self-interstitial, Phys. Rev. Lett, vol.102, p.26402, 2009. ,
Charged oxygen defects in SiO 2 : Going beyond local and semilocal approximations to density functional theory, Phys. Rev. Lett, vol.104, p.75502, 2010. ,
An EPR study of the lattice vacancy in silicon, J. Phys. Soc. Japan, vol.18, p.22, 1963. ,
Firstprinciples study of phosphorus diffusion in silicon: Interstitial-and vacancy-mediated diffusion mechanisms, Applied Physics Letters, vol.82, pp.1839-1841, 2003. ,
Electronic structure of vacancy-phosphorus impurity complexes in silicon, MRS Proceedings, vol.163, p.287, 1989. ,