Skip to Main content Skip to Navigation
Conference papers

Degradation indicators of power-GaN-HEMT under switching power-cycling

Abstract : This paper describes the design of a power-cycling test bench to study the reliability of power-GaN-HEMT power switches. The aim of the presented paper is to study the measurable electrical consequences of internal degradation with aging. The shift of these measured parameters can be considered as reliability indicators. With the aim to decorrelate thermomechanical effects from internal GaN-specific degradation, the temperature was limited by choosing the stress parameters with the use of an infrared camera. The power-cycling test was designed with GaN-specific gate drivers to consider the pGaN-gate requirements. Thorough the power-cycling test we have tracked the evolution of electrical parameters that have been identified as degradation indicators. Finally, we have studied the link between the stress parameters and the degradation, as well as the correlation between different degradation indicators.
Complete list of metadata

Cited literature [16 references]  Display  Hide  Download
Contributor : Patrick Tounsi <>
Submitted on : Wednesday, May 20, 2020 - 11:54:41 AM
Last modification on : Thursday, June 10, 2021 - 3:48:20 AM


ESREF_2019_Degradation indicat...
Files produced by the author(s)



M González-Sentís, Patrick Tounsi, A. Bensoussan, A. Dufour. Degradation indicators of power-GaN-HEMT under switching power-cycling. ESREF 2019, Sep 2019, Toulouse, France. ⟨10.1016/j.microrel.2019.113412⟩. ⟨hal-02613682⟩



Record views


Files downloads