Skip to Main content Skip to Navigation
Journal articles

3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth

Abstract : We demonstrate an Interband Cascade Resonant Cavity Light Emitting Diode (IC-RCLED) operating near 3.3 µm at room temperature. The device is composed of a Sb-based type-II interband-cascade active zone enclosed between two distributed Bragg mirrors (DBR). The bottom high reflective DBR is composed of GaSb/AlAsSb quarter-wave layers. A metamorphic III-As region is grown after the active zone to benefit from the AlOx technology for efficient electro-optical confinement. The structure is finished with a top ZnS/Ge dielectric DBR. The devices with oxide aperture ranging from 5 to 35 µm were studied in the continuous wave (CW) regime. The fabricated IC-RCLEDs operated up to 80°C (set-up limited) and exhibited narrow emission spectra with a full width at half maximum (FWHM) of 21 nm, which is 20 times smaller compared with conventional IC-LEDs. The narrow emission line and its weak temperature dependence make the fabricated devices very attractive for low cost gas sensors.
Complete list of metadatas

https://hal.laas.fr/hal-02959663
Contributor : Stéphane Calvez <>
Submitted on : Wednesday, October 7, 2020 - 7:49:02 AM
Last modification on : Wednesday, October 14, 2020 - 3:28:46 AM

Identifiers

Citation

Daniel Díaz-Thomas, Oleksandr Stepanenko, Michaël Bahriz, Stéphane Calvez, Thomas Batte, et al.. 3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth. Semiconductor Science and Technology, IOP Publishing, 2020, ⟨10.1088/1361-6641/abbebc⟩. ⟨hal-02959663⟩

Share

Metrics

Record views

17