Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys, IEEE Transactions on Electron Devices, vol.40, issue.11, pp.1990-1996, 1993. ,
A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors, IEEE International Electron Devices Meeting 2003 ,
A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors, IEEE Int. Electron Devices Meet, vol.6, pp.11-17, 2003. ,
, Subsecond Annealing of Advanced Materials, 2014.
Excimer Laser Annealing for Ultrashallow Junctions and Contacts, 2008. ,
(Invited) Selective Epitaxial Growth of High-P Si:P for Source/Drain Formation in Advanced Si nFETs, ECS Transactions, vol.75, issue.8, pp.347-359, 2016. ,
Selective Epitaxial Growth of High-P Si:P for Source/Drain Formation in Advanced Si nFETs, ECS Trans, vol.75, pp.347-359, 2016. ,
Ultrashallow (<10nm) p+?n junction formed by B18H22 cluster ion implantation and excimer laser annealing, Applied Physics Letters, vol.89, issue.24, p.243516, 2006. ,
Doping of semiconductor devices by Laser Thermal Annealing, Materials Science in Semiconductor Processing, vol.62, pp.92-102, 2017. ,
High-level incorporation of antimony in germanium by laser annealing, Journal of Applied Physics, vol.108, issue.12, p.124902, 2010. ,
Defect evolution and dopant activation in laser annealed Si and Ge, Materials Science in Semiconductor Processing, vol.42, pp.188-195, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01921268
Defect evolution and dopant activation in laser annealed Si and Ge, Mater. Sci. Semicond. Process, vol.42, pp.188-195, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01921268
Recent advances in 3D VLSI integration, 2016 International Conference on IC Design and Technology (ICICDT), 2016. ,
Recent advances in low temperature process in view of 3D VLSI integration, 2016 IEEE SOI-3D-Subthreshold Microelectron. Technol. Unified Conf. S3S, pp.1-3, 2016. ,
,
, 3DVLSI with CoolCube process: An alternative path to scaling, pp.48-49, 2015.
(Invited) Sequential 3D Process Integration: Opportunities for Low Temperature Processing, ECS Transactions, vol.80, issue.4, pp.215-225, 2017. ,
Ns laser annealing for junction activation preserving inter-tier interconnections stability within a 3D sequential integration, 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2016. ,
New insights on bottom layer thermal stability and laser annealing promises for high performance 3D VLSI, IEEE Int. Electron Devices Meet, pp.27-32, 2014. ,
PMOS contact resistance solution compatible to CMOS integration for 7 nm node and beyond, 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2016. ,
, PMOS contact resistance solution compatible to CMOS integration for 7 nm node and beyond, pp.1-2, 2016.
Sub-10?9 ?·cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation, 2017 Symposium on VLSI Technology, pp.10-19, 2017. ,
Sub-10?9 ?·cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation, 2017 Symposium on VLSI Technology, pp.214-215, 2017. ,
Ultra-low (1.2×10?9 ?cm2) p-Si<inf>0.55</inf>Ge<inf>0.45</inf> contact resistivity (?<inf>c</inf>) using nanosecond laser anneal for 7nm nodes and beyond, 2017 17th International Workshop on Junction Technology (IWJT), 2017. ,
, Ultra-low (1.2E-9 ohmcm2) p-Si0.55Ge0.45 contact resistivity using nanosecond laser anneal for 7nm nodes and beyond, pp.23-26, 2017.
Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10?10 ?·cm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation, 2017 IEEE International Electron Devices Meeting (IEDM), 2017. ,
Comprehensive study of Ga activation in Si, SiGe and Ge with, vol.5, pp.3-9 ,
Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10?10 ?·cm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation, 2017 IEEE International Electron Devices Meeting (IEDM), 2017. ,
External Resistance Reduction by Nanosecond Laser Anneal in Si/SiGe CMOS Technology, 2018 IEEE International Electron Devices Meeting (IEDM), 2018. ,
External Resistance Reduction by Nanosecond Laser Anneal in Si/SiGe CMOS Technology, IEEE Int. Electron Devices Meet. IEDM, 2018. ,
Germanium partitioning in silicon during rapid solidification, Journal of Applied Physics, vol.78, issue.3, pp.1575-1582, 1995. ,
Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches, Materials Science in Semiconductor Processing, vol.62, pp.80-91, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-01921231
Laser annealing induced high Ge concentration epitaxial SiGe layer in Si1?xGex virtual substrate, Applied Physics Letters, vol.93, issue.4, p.041112, 2008. ,
High resolution electron microscopy and x-ray photoelectron spectroscopy studies of heteroepitaxial SixGe(1?x) alloys produced through laser induced processing, Applied Physics Letters, vol.72, issue.22, pp.2877-2879, 1998. ,
Pulsed laser assisted epitaxy of GexSi1?xalloys on Si ?100?, Applied Physics Letters, vol.59, issue.26, pp.3455-3457, 1991. ,
Synthesis of strained SiGe on Si(100) by pulsed laser induced epitaxy, Thin Solid Films, vol.518, issue.9, pp.2542-2545, 2010. ,
Epitaxial GexSi1?x/Si (100) structures produced by pulsed laser mixing of evaporated Ge on Si (100) substrates, Applied Physics Letters, vol.52, issue.3, pp.230-232, 1988. ,
Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing, Journal of Applied Physics, vol.113, issue.20, p.204902, 2013. ,
A low-cost method of forming epitaxy SiGe on Si substrate by laser annealing, Applied Physics Letters, vol.94, issue.8, p.082104, 2009. ,
Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers, ECS Journal of Solid State Science and Technology, vol.8, issue.3, pp.P202-P208, 2019. ,
URL : https://hal.archives-ouvertes.fr/cea-02186445
Critical thickness for plastic relaxation of SiGe on Si(001) revisited, Journal of Applied Physics, vol.110, issue.8, p.083529, 2011. ,
Dynamics of the solidification of laser-annealed Si thin films, Mater. Sci. Eng. A, vol.173, issue.93, pp.90242-90249, 1993. ,
On the Interpretation of Time-Resolved Surface Reflectivity Measurements during the Laser Annealing of Si Thin Films, Phys. Status Solidi A, vol.166, pp.643-650, 199804. ,
Laser-induced periodic surface structure. III. Fluence regimes, the role of feedback, and details of the induced topography in germanium, Physical Review B, vol.30, issue.4, pp.2001-2015, 1984. ,
Time-resolved reflectivity measurements on silicon and germanium using a pulsed excimer KrF laser heating beam, Physical Review B, vol.34, issue.4, pp.2407-2415, 1986. ,
Effects of local melting on semiconductor surfaces, Energy Pulse Modif. Semicond. Relat. Mater, pp.265-279, 1984. ,
Process control and melt depth homogenization for SiC-on-Si structures during flash lamp annealing by carbon implantation, Journal of Applied Physics, vol.100, issue.9, p.094909, 2006. ,
Phosphorous Diffusion in N2+-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering, ECS Journal of Solid State Science and Technology, vol.6, issue.7, pp.P418-P428, 2017. ,
Phosphorous Diffusion in N2+-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering, ECS J. Solid State Sci. Technol, vol.6, pp.418-428, 2017. ,
Melting and superheating of crystalline solids: From bulk to nanocrystals, Progress in Materials Science, vol.52, issue.8, pp.1175-1262, 2007. ,
Melting of crystalline silicon thin films, Computational Materials Science, vol.89, pp.97-101, 2014. ,
Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers, ECS Journal of Solid State Science and Technology, vol.8, issue.3, pp.P202-P208, 2019. ,
URL : https://hal.archives-ouvertes.fr/cea-02186445
Strain relaxation and dislocations in SiGe/Si structures, Materials Science and Engineering: R: Reports, vol.17, issue.3, pp.105-146, 1996. ,
, , pp.192-193
The fabrication of epitaxial GexSi1?x layers by ion implantation, Nucl. Instrum. Methods Phys. Res. Sect. B Beam Interact. Mater. At, issue.93, p.90678, 1993. ,
The growth of strained Si1?xGex alloys on ?001? silicon using solid phase epitaxy, Journal of Materials Research, vol.5, issue.5, pp.1023-1031, 1990. ,
Calculation of critical layer thickness versus lattice mismatch for GexSi1?x/Si strained?layer heterostructures, Applied Physics Letters, vol.47, issue.3, pp.322-324, 1985. ,
Formation of extended defects and strain relaxation in ion beam synthesised SiGe alloys, Nucl. Instrum. Methods Phys. Res. Sect. B Beam Interact. Mater. At, vol.147, pp.589-597, 1999. ,
Strain relief in compositionally graded Si1-xGex formed by high dose Ion implantation, Journal of Electronic Materials, vol.20, issue.7, pp.735-746, 1991. ,
Strain relaxation models, ArXiv Prepr. ArXiv11025000, 2011. ,
Properties of advanced semiconductor materials, 2001. ,