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Experimental Comparison of Discrete Cascode GaN-GaN and Single e-GaN in High-Frequency Power Converter

Abstract : This paper describes the analysis and experimental test of a discrete cascode GaN-GaN intended for high-frequency power converters. The proposed configuration takes advantages of both the high switching frequency capabilities of GaN-HEMTs and the robustness of depletion-mode GaN devices. Experimental tests compare the designed cascode GaN-GaN with an equivalent single enhancement-mode GaN device. The test is carried out in a boost converter of 400V-400W-30MHz. This power converter topology allows comparing both configurations in a demanding hard-switching condition. Experimental results suggest that at high-power and high-frequency the proposed cascode configuration can lead to performance improvements in the power converter selected for the test. These improvements arise from the reduced Miller-effect and the lower gate current of the cascode GaN-GaN.
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https://hal.laas.fr/hal-02998007
Contributor : David Trémouilles <>
Submitted on : Tuesday, November 10, 2020 - 12:36:42 PM
Last modification on : Thursday, June 10, 2021 - 3:06:26 AM
Long-term archiving on: : Friday, February 12, 2021 - 12:17:13 PM

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  • HAL Id : hal-02998007, version 1

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A Gutierrez, E Marcault, Corinne Alonso, David Trémouilles. Experimental Comparison of Discrete Cascode GaN-GaN and Single e-GaN in High-Frequency Power Converter. PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Jul 2020, Nuremberg (Virtual), Germany. ⟨hal-02998007⟩

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