Skip to Main content Skip to Navigation
Conference papers

Development of 1 eV InGaAsN PIN subcell for MJSC integration and space application

Abstract : This paper reports on the optimization of 1eV dilute nitride solar cells growth conditions. InGaAsN cells were grown by MBE under different conditions (V/III ratio, substrate temperature, surfactant) and were processed without post-growth annealing. Characterization results suggest that the V/III ratio should be kept above 10 and that using Bi as a surfactant does not improve the cell performances. Our best InGaAsN cells exhibit Jsc and Voc values of 7.9 mA/cm 2 and 0.375 V respectively, under AM0> 870 nm and without ARC.
Complete list of metadata

https://hal.laas.fr/hal-03012129
Contributor : Guilhem Almuneau <>
Submitted on : Wednesday, November 18, 2020 - 1:53:47 PM
Last modification on : Thursday, June 10, 2021 - 3:03:08 AM
Long-term archiving on: : Friday, February 19, 2021 - 7:38:09 PM

File

2020_abstract_LEVILLAYER_PVSC ...
Files produced by the author(s)

Identifiers

Citation

Maxime Levillayer, Sophie Duzellier, Hélène Carrère, Inès Massiot, Thierry Nuns, et al.. Development of 1 eV InGaAsN PIN subcell for MJSC integration and space application. 47th IEEE Photovoltaic Specialists Conference (PVSC 47), IEEE, Jun 2020, Calgary (virtual), Canada. ⟨10.1109/PVSC45281.2020.9300570⟩. ⟨hal-03012129⟩

Share

Metrics

Record views

90

Files downloads

69