Development of 1 eV InGaAsN PIN subcell for MJSC integration and space application
Abstract
This paper reports on the optimization of 1eV dilute nitride solar cells growth conditions. InGaAsN cells were grown by MBE under different conditions (V/III ratio, substrate temperature, surfactant) and were processed without post-growth annealing. Characterization results suggest that the V/III ratio should be kept above 10 and that using Bi as a surfactant does not improve the cell performances. Our best InGaAsN cells exhibit Jsc and Voc values of 7.9 mA/cm 2 and 0.375 V respectively, under AM0> 870 nm and without ARC.
Origin : Files produced by the author(s)