Degradation study of InGaAsN PIN solar cell under 1 MeV electron irradiation

Degradation of InGaAsN pinsubcell under 1MeV electron irradiation was studied by characterizing solar cells and dilute nitride bulklayers before and after irradiation. The measurements show that these cells retain more than 94% of their original photocurrent after an 1015cm-2 electron-irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation

Keywords

Degradation dilute nitrides electrons InGaAsN irradiation MJSC solar cell DLTS PL EQE

Domains

Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics Engineering Sciences [physics] Materials Engineering Sciences [physics] Optics / Photonic

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proceeding_RADECS CA_GA.pdf (470.9 Ko)

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Guilhem Almuneau : Connect in order to contact the contributor

https://hal.laas.fr/hal-03012157

Submitted on : Wednesday, November 18, 2020-2:05:18 PM

Last modification on : Monday, March 13, 2023-12:52:04 PM

Long-term archiving on: Friday, February 19, 2021-7:41:31 PM

Dates and versions

hal-03012157 , version 1 (18-11-2020)

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HAL Id : hal-03012157 , version 1

Cite

Maxime Levillayer, Sophie Duzellier, Thierry Nuns, Christophe Inguimbert, Tifenn Lecocq, et al.. Degradation study of InGaAsN PIN solar cell under 1 MeV electron irradiation. RADECS 2020, Oct 2020, Virtual, France. ⟨hal-03012157⟩

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