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Degradation study of InGaAsN PIN solar cell under 1 MeV electron irradiation

Abstract : Degradation of InGaAsN pinsubcell under 1MeV electron irradiation was studied by characterizing solar cells and dilute nitride bulklayers before and after irradiation. The measurements show that these cells retain more than 94% of their original photocurrent after an 1015cm-2 electron-irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation
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https://hal.laas.fr/hal-03012157
Contributor : Guilhem Almuneau <>
Submitted on : Wednesday, November 18, 2020 - 2:05:18 PM
Last modification on : Thursday, June 10, 2021 - 3:01:33 AM
Long-term archiving on: : Friday, February 19, 2021 - 7:41:31 PM

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  • HAL Id : hal-03012157, version 1

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Maxime Levillayer, Sophie Duzellier, Thierry Nuns, Christophe Inguimbert, Tifenn Lecocq, et al.. Degradation study of InGaAsN PIN solar cell under 1 MeV electron irradiation. RADECS 2020, Oct 2020, Virtual, France. ⟨hal-03012157⟩

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