Degradation study of InGaAsN PIN solar cell under 1 MeV electron irradiation

Degradation of InGaAsN pinsubcell under 1MeV electron irradiation was studied by characterizing solar cells and dilute nitride bulklayers before and after irradiation. The measurements show that these cells retain more than 94% of their original photocurrent after an 1015cm-2 electron-irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation

Mots clés

Degradation dilute nitrides electrons InGaAsN irradiation MJSC solar cell DLTS PL EQE

Domaines

Micro et nanotechnologies/Microélectronique Matériaux Optique / photonique

Fichier principal

proceeding_RADECS CA_GA.pdf (470.9 Ko)

Origine : Fichiers produits par l'(les) auteur(s)

Guilhem Almuneau : Connectez-vous pour contacter le contributeur

https://laas.hal.science/hal-03012157

Soumis le : mercredi 18 novembre 2020-14:05:18

Dernière modification le : vendredi 5 avril 2024-14:20:09

Archivage à long terme le : vendredi 19 février 2021-19:41:31

Dates et versions

hal-03012157 , version 1 (18-11-2020)

Identifiants

HAL Id : hal-03012157 , version 1

Citer

Maxime Levillayer, Sophie Duzellier, Thierry Nuns, Christophe Inguimbert, Tifenn Lecocq, et al.. Degradation study of InGaAsN PIN solar cell under 1 MeV electron irradiation. RADECS 2020, Oct 2020, Virtual, France. ⟨hal-03012157⟩

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