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Journal articles
Degradation study of InGaAsN PIN solar cell under 1 MeV electrons irradiation
Abstract : The degradation of InGaAsN pin subcell under 1 MeV electrons irradiation was studied by characterizing solar cells and dilute nitride bulk layers before and after irradiation. Cells are measured to retain more than 94 % of their original photocurrent after 10 15 cm-2 1 MeV-electrons irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation.
https://hal.laas.fr/hal-03012605
Contributor : Guilhem Almuneau Connect in order to contact the contributor
Submitted on : Wednesday, November 18, 2020 - 4:06:57 PM
Last modification on : Wednesday, June 1, 2022 - 3:58:31 AM
Long-term archiving on: : Friday, February 19, 2021 - 8:12:55 PM
Contributor : Guilhem Almuneau Connect in order to contact the contributor
Submitted on : Wednesday, November 18, 2020 - 4:06:57 PM
Last modification on : Wednesday, June 1, 2022 - 3:58:31 AM
Long-term archiving on: : Friday, February 19, 2021 - 8:12:55 PM
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Article_TNS_2020_v2.pdf
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