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Degradation study of InGaAsN PIN solar cell under 1 MeV electrons irradiation

Abstract : The degradation of InGaAsN pin subcell under 1 MeV electrons irradiation was studied by characterizing solar cells and dilute nitride bulk layers before and after irradiation. Cells are measured to retain more than 94 % of their original photocurrent after 10 15 cm-2 1 MeV-electrons irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation.
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https://hal.laas.fr/hal-03012605
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Submitted on : Wednesday, November 18, 2020 - 4:06:57 PM
Last modification on : Wednesday, June 1, 2022 - 3:58:31 AM
Long-term archiving on: : Friday, February 19, 2021 - 8:12:55 PM

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Maxime Levillayer, Sophie Duzellier, I. Massiot, Thierry Nuns, Christophe Inguimbert, et al.. Degradation study of InGaAsN PIN solar cell under 1 MeV electrons irradiation. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (8), pp.1694 - 1700. ⟨10.1109/TNS.2021.3068044⟩. ⟨hal-03012605⟩

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