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Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO 2

Abstract : The formation energies and diffusion paths of Oi, O2i and BO2 complex in silicon are determined using ab initio calculations and used to calibrate a Kinetic Monte Carlo. The aim is to simulate the formation of the BO2 complex in Technology Computer Aided Design tools.
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https://hal.laas.fr/hal-03366600
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Submitted on : Tuesday, October 5, 2021 - 5:17:33 PM
Last modification on : Friday, November 12, 2021 - 4:07:54 PM

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Pierre-Louis Julliard, Antoine Jay, Miha Gunde, Nicolas Salles, Frederic Monsieur, et al.. Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO 2. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. ⟨10.1109/SISPAD54002.2021.9592580⟩. ⟨hal-03366600⟩

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