Fabrication and characterization of Si3N4-MIS structures on p-type diamond - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly
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Fabrication and characterization of Si3N4-MIS structures on p-type diamond

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Micro and nanotechnologies/Microelectronics Electric power Electronics
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JOSIANE TASSELLI  : Connect in order to contact the contributor

https://hal.laas.fr/hal-03445543

Submitted on : Wednesday, November 24, 2021-9:05:12 AM

Last modification on : Monday, April 17, 2023-6:32:10 PM

Long-term archiving on: Friday, February 25, 2022-6:14:35 PM

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hal-03445543 , version 1 (24-11-2021)

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  • HAL Id : hal-03445543 , version 1

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Lya Fontaine, Karine Isoird, Josiane Tasselli, Emmanuel Scheid, Patrick Austin, et al.. Fabrication and characterization of Si3N4-MIS structures on p-type diamond. 31st International Conference on Diamond and Carbon Materials, Sep 2021, On line, Spain. ⟨hal-03445543⟩

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UNIV-PARIS13 UNIV-TLSE2 CNRS INSA-TOULOUSE LAAS UT1-CAPITOLE LSPM_P13 LAAS-ISGE LAAS-MPN LAAS-GESTION-DE-L-ENERGIE LAAS-MICRO-NANO-BIO-TECHNOLOGIES LAAS-S4M LAAS-SYSTEMES-COMPLEXES GALILE INSA-GROUPE SORBONNE-PARIS-NORD TOULOUSE-INP UNIV-UT3 UT3-TOULOUSEINP
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