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Article Dans Une Revue AIP Advances Année : 2021

Selective wet oxidation of AlAsSb alloys on GaAs

Oxydation humide sélective d'alliages d'AlAsSb sur GaAs

Stéphane Calvez
Oleksandr Stepanenko
Kevin Louarn
  • Fonction : Auteur
Guilhem Almuneau

Résumé

In this paper, the oxidation of thin low-Sb-containing AlAsSb layers quasi-lattice matched on GaAs substrates is studied in detail since, compared to AlGaAs, these alloys had the prospects of being laterally oxidized at a faster rate, at lower process temperatures and with a reduced volume change. Combining monitoring data of the oxidation kinetics and anisotropy with atomic-force-microscopy surface measurements enables to establish the optimal composition range and process parameters that lead to nearly-isotropic and Sb-segregation-free oxidations. The study also shows that strain plays a central role in triggering the detrimental Sb segregation.
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Dates et versions

hal-03469949 , version 1 (08-12-2021)

Identifiants

Citer

Stéphane Calvez, Oleksandr Stepanenko, Kevin Louarn, Emmanuelle Daran, Alexandre Arnoult, et al.. Selective wet oxidation of AlAsSb alloys on GaAs. AIP Advances, 2021, 11 (12), pp.125010. ⟨10.1063/5.0073200⟩. ⟨hal-03469949⟩
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