HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Journal articles

Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor

Abstract : In this paper, we present an improved methodology to extract the small-signal electrical equivalent circuit of the parasitic elements using RF test structures for a 3D vertical nanowire transistor technology. The methodology is based on the extraction of the distributed parasitic elements from an open structure for which on-wafer S-parameter measurements were carried out up to 40 GHz. The electrical equivalent circuit of the passive device was then used for de-embedding of the transistor S-parameters for extraction of intrinsic smallsignal parameters such as the gate capacitances.
Complete list of metadata

https://hal.archives-ouvertes.fr/hal-03657781
Contributor : Chhandak Mukherjee Connect in order to contact the contributor
Submitted on : Tuesday, May 3, 2022 - 12:18:25 PM
Last modification on : Wednesday, May 4, 2022 - 3:48:32 AM

File

 Restricted access
To satisfy the distribution rights of the publisher, the document is embargoed until : 2022-10-27

Please log in to resquest access to the document

Identifiers

Citation

Bruno Neckel Wisling, Marina Deng, Chhandak Mukherjee, Magali de Matos, Abhishek Kumar, et al.. Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor. Solid-State Electronics, Elsevier, 2022, 194, pp.108359. ⟨10.1016/j.sse.2022.108359⟩. ⟨hal-03657781⟩

Share

Metrics

Record views

0