A. Kyuregyan and S. Yurkov, Room-temperature avalanche breakdown voltages of p-n junctions made of Si, Soviet Physics?Semiconductors(English Translation), vol.23, issue.10, pp.1126-1157, 1989.

T. P. Chow and R. Tyagi, Wide bandgap compound semiconductors for superior high-voltage unipolar power devices, IEEE Transactions on Electron Devices, vol.41, issue.8, pp.1481-1483, 1994.
DOI : 10.1109/16.297751

T. Fujihira, Theory of Semiconductor Superjunction Devices, Japanese Journal of Applied Physics, vol.36, issue.Part 1, No. 10, p.6254, 1997.
DOI : 10.1143/JJAP.36.6254

A. Nakagawa, Y. Kawaguchi, and K. Nakamura, Silicon limit electrical characteristics of power devices and Ics, 9th International Seminar on Power Semiconductors (ISPS 2008), 2008.
DOI : 10.1049/ic:20080230

B. Ozpineci and L. Tolbert, Comparison of wide-bandgap semiconductors for power electronics applications
DOI : 10.2172/885849

J. Stephen, C. R. Pearton, F. Abernathy, and . Ren, Gallium nitride processing for electronics, sensors and spintronics, 2006.

Y. Okada and Y. Tokumaru, Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K, Journal of Applied Physics, vol.56, issue.2, pp.314-320, 1984.
DOI : 10.1063/1.333965

E. Michael, . Levinshtein, L. Sergey, . Rumyantsev, S. Michael et al., Properties of Advanced Semiconductor Materials, 2001.

M. Shur, M. Levinshtein, and S. Rumyantsev, SiC materials and devices, World Scientific, 2006.

Y. Cai, Z. Cheng, W. C. Tang, K. M. Lau, and K. J. Chen, Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using<tex>$hboxCF_4$</tex>Plasma Treatment, IEEE Transactions on Electron Devices, vol.53, issue.9, pp.2223-2230, 2006.
DOI : 10.1109/TED.2005.881002

O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu et al., Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures, Journal of Applied Physics, vol.85, issue.6, pp.853222-3233, 1999.
DOI : 10.1063/1.369664

I. P. Smorchkova, L. Chen, T. Mates, L. Shen, S. Heikman et al., AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy, Journal of Applied Physics, vol.90, issue.10, pp.905196-5201, 2001.
DOI : 10.1063/1.1412273

R. Coffie, Y. C. Chen, I. Smorchkova, M. Wojtowicz, Y. C. Chou et al., Impact of AlN interalayer on reliability of AlGaN/GaN hemts, Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International, pp.99-102, 2006.

J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. Denbaars, J. S. Speck et al., Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors, Applied Physics Letters, vol.77, issue.2, pp.250-252, 2000.
DOI : 10.1063/1.126940

G. Koley, C. I. Ho-young-cha, M. G. Thomas, and . Spencer, Laser-induced surface potential transients observed in III-nitride heterostructures, Applied Physics Letters, vol.81, issue.12, pp.812282-2284, 2002.
DOI : 10.1063/1.1506416

G. Koley and M. G. Spencer, On the origin of the two-dimensional electron gas at the AlGaN???GaN heterostructure interface, Applied Physics Letters, vol.86, issue.4, 2005.
DOI : 10.1063/1.1850600

L. Gordon, M. Miao, S. Chowdhury, M. Higashiwaki, K. Umesh et al., Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions, Journal of Physics D: Applied Physics, vol.43, issue.50, p.43505501, 2010.
DOI : 10.1088/0022-3727/43/50/505501

C. G. Swenson, U. K. Van-de-walle, and . Mishra, Distribution of donor states on etched surface of AlGaN/GaN heterostructures, Journal of Applied Physics, vol.108, issue.6, 2010.

M. S. Miao, J. R. Weber, and C. G. Van-de-walle, Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures, Journal of Applied Physics, vol.107, issue.12, 2010.
DOI : 10.1063/1.3431391

D. Delagebeaudeuf, P. Delescluse, P. Etienne, M. Laviron, J. Chaplart et al., Two-dimensional electron gas M, E.S.F.E.T. structure. Electronics Letters, vol.16, issue.17, pp.667-668, 1980.

T. Mimura, S. Hiyamizu, T. Fujii, and K. Nanbu, As Heterojunctions, Japanese Journal of Applied Physics, vol.19, issue.5, p.225, 1980.
DOI : 10.1143/JJAP.19.L225

. Mishra, Measured microwave power performance of AlGaN, GaN MODFET. Electron Device Letters IEEE, vol.17, issue.9, pp.455-457, 1996.

S. Fanget and C. Bru-chevalier, Matériaux et hétérostructures à base de nitrures d'éléments III en phase cubique et hexagonale pour l'optoélectronique, 2002.

K. Jena, R. Swain, and T. Lenka, Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices, Modelling : Electronic Networks, Devices and Fields, 2015.
DOI : 10.1002/jnm.2048

J. Robertson and B. Falabretti, Band offsets of high K gate oxides on III-V semiconductors, Journal of Applied Physics, vol.100, issue.1, 2006.
DOI : 10.1063/1.2213170

M. A. Khan, Q. Chen, C. J. Sun, J. W. Yang, M. Blasingame et al., Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors, Applied Physics Letters, vol.68, issue.4, pp.514-516, 1996.
DOI : 10.1063/1.116384

W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, and I. Omura, Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications, IEEE Transactions on Electron Devices, vol.53, issue.2, pp.356-362, 2006.
DOI : 10.1109/TED.2005.862708

R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs, IEEE Transactions on Electron Devices, vol.48, issue.3, pp.560-566, 2001.
DOI : 10.1109/16.906451

T. Hashizume and H. Hasegawa, Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes, The Ninth International Conference on the Formation of Semiconductor Interfaces, pp.387-394, 2004.
DOI : 10.1016/j.apsusc.2004.05.091

F. González-posada, J. A. Bardwell, S. Moisa, S. Haffouz, H. Tang et al., Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by Xray photoelectron spectroscopy, Applied surface science, issue.14, pp.2536185-6190, 2007.

R. Sohal, P. Dudek, and O. Hilt, Comparative study of NH4OH and HCl etching behaviours on AlGaN surfaces, Applied Surface Science, vol.256, issue.7, pp.2210-2214, 2010.
DOI : 10.1016/j.apsusc.2009.09.075

M. Romero, A. Jimenez, F. Gonzalez-posada-flores, S. Martin-horcajo, F. Calle et al., Impact of <formula formulatype="inline"><tex Notation="TeX">$\hbox{N}_{2}$</tex></formula> Plasma Power Discharge on AlGaN/GaN HEMT Performance, Impact of N 2 Plasma Power Discharge on AlGaN/GaN HEMT Performance. Electron Devices, pp.374-379, 2012.
DOI : 10.1109/TED.2011.2176947

A. P. Edwards, J. A. Mittereder, S. C. Binari, D. S. Katzer, D. F. Storm et al., Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation, IEEE Electron Device Letters, vol.26, issue.4, pp.225-227, 2005.
DOI : 10.1109/LED.2005.844694

F. Qian, T. Yuan, B. Zhi-wei, Y. Yuan-zheng, N. Jin-yu et al., plasma pretreatment, Chinese Physics B, vol.18, issue.7, p.3014, 2009.
DOI : 10.1088/1674-1056/18/7/066

J. Ha-kim, H. G. Choi, M. Ha, H. Song, C. Hyun-roh-ho-lee et al., Effects of Nitride- Based Plasma Pretreatment Prior to SiNx Passivation in AlGaN/GaN High- Electron-Mobility Transistors on Silicon Substrates, Japanese Journal of Applied Physics, vol.49, issue.4, pp.4-05, 2010.

R. J. Davis and . Nemanich, Cleaning of AlN and GaN surfaces, Journal of Applied Physics, vol.84, issue.9, pp.5248-5260, 1998.

R. Lossy, H. Gargouri, M. Arens, and J. Würfl, Gallium nitride MIS-HEMT using atomic layer deposited Al 2 O 3 as gate dielectric, Journal of Vacuum Science & Technology A, vol.31, issue.1, pp.1-140, 2013.

O. Saadat and T. Palacios, Low temperature gate dielectric deposition for recessed AlGaN, GaN MIS-HEMTs. Solid-State Device Research Conference (ESSDERC), pp.287-291, 2011.

P. B. Klein, S. C. Binari, K. Ikossi, A. E. Wickenden, D. D. Koleske et al., Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy, Applied Physics Letters, vol.79, issue.21, pp.793527-3529, 2001.
DOI : 10.1063/1.1418452

C. Steven, K. Binari, J. A. Ikossi, W. Roussos, D. Kruppa et al., Trapping effects and microwave power performance in AlGaN, GaN HEMTs. Electron Devices IEEE Transactions on, vol.48, issue.3, pp.465-471, 2001.

R. Vetury, Q. Naiqain, S. Zhang, . Keller, K. Umesh et al., The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs, IEEE Transactions on Electron Devices, vol.48, issue.3, pp.560-566, 2001.
DOI : 10.1109/16.906451

G. Verzellesi, G. Meneghesso, A. Chini, E. Zanoni, and C. Canali, DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues, Microelectronics Reliability, vol.45, issue.9-11, pp.1585-1592, 2005.
DOI : 10.1016/j.microrel.2005.07.064

D. Bisi, M. Meneghini, M. Van-hove, D. Marcon, S. Stoffels et al., Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate, physica status solidi (a), vol.103, issue.5, pp.2121122-1129, 2015.
DOI : 10.1002/pssa.201431744

G. Meneghesso, M. Meneghini, E. Zanoni, P. Vanmeerbeek, and P. Moens, Trapping induced parasitic effects in GaN-HEMT for power switching applications, 2015 International Conference on IC Design & Technology (ICICDT), p.2015
DOI : 10.1109/ICICDT.2015.7165899