C. Viallon, « Optimisation de structures différentielles en technologie SiGe pour applications en bande millimétrique. Application à la conception d'un mélangeur doublement équilibré en bande K », 2003.

D. Allassem, Contribution à la réalisation d'une micro-inductance planaire, 2010.

N. Pulsford, Passive integration technology: Targeting small, accurate RF parts, pp.40-48, 2002.

A. Maric, G. Radosavljevic, and L. Zivanov, Stojanovic, « A simple approach for modelling and simulation monolithic inductors, Semiconductor Conference, pp.459-462, 2009.

A. M. Niknejad and R. G. Meyer, Analysis, design, and optimization of spiral inductors and transformers for Si RF ICs, IEEE Journal of Solid-State Circuits, vol.33, issue.10, pp.1470-1481, 1998.
DOI : 10.1109/4.720393

Y. S. Lin, C. Z. Chen, H. B. Liang, and C. C. Chen, High-Performance On-Chip Transformers With Partial Polysilicon Patterned Ground Shields (PGS), IEEE Transactions on Electron Devices, vol.54, issue.1, pp.157-160, 2007.
DOI : 10.1109/TED.2006.887044

K. T. Ng, B. Rejaei, and J. N. Burghartz, Substrate effects in monolithic RF transformers on silicon, IEEE Transactions on Microwave Theory and Techniques, vol.50, issue.1, pp.377-383, 2002.
DOI : 10.1109/22.981289

W. Z. Chen, W. H. Chen, and K. C. Hsu, Three-Dimensional Fully Symmetric Inductors, Transformer, and Balun in CMOS Technology, IEEE Transactions on Circuits and Systems I: Regular Papers, vol.54, issue.7, pp.1413-1423, 2007.
DOI : 10.1109/TCSI.2007.899628
URL : http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.1031.5428

C. C. Lim, K. S. Yeo, K. W. Chew, A. Cabuk, J. M. Gu et al., Do, « Fully Symmetrical Monolithic Transformer (True 1:1) for Silicon RFIC, IEEE Trans. Microw. Theory Tech, vol.56, issue.10, pp.2301-2311, 2008.

D. Fang, X. Wang, Y. Zhou, and X. Zhao, « Fabrication and performance of a micromachined 3-D solenoid inductor », Microelectron, J, vol.37, issue.9, pp.948-951, 2006.

J. Craninckx and M. S. Steyaert, A 1.8-GHz low-phase-noise CMOS VCO using optimized hollow spiral inductors, IEEE Journal of Solid-State Circuits, vol.32, issue.5, pp.736-744, 1997.
DOI : 10.1109/4.568844

C. P. Yue and S. S. Wong, On-chip spiral inductors with patterned ground shields for Si-based RF ICs, IEEE Journal of Solid-State Circuits, vol.33, issue.5, pp.743-752, 1998.
DOI : 10.1109/4.668989

J. H. He, G. Lihui, and E. J. Xie, Fabrication and simulation of copper spiral on-chip inductors for RF wireless communication, 2002 3rd International Conference on Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002., pp.713-716, 2002.
DOI : 10.1109/ICMMT.2002.1187800

J. Burghartz, M. Soyuer, and E. K. Jenkins, Microwave inductors and capacitors in standard multilevel interconnect silicon technology, IEEE Transactions on Microwave Theory and Techniques, vol.44, issue.1, pp.100-104, 1996.
DOI : 10.1109/22.481391

J. N. Burghartz and B. Rejaei, On the design of RF spiral inductors on silicon, IEEE Transactions on Electron Devices, vol.50, issue.3, pp.718-729, 2003.
DOI : 10.1109/TED.2003.810474

H. Bae, S. Kim, J. Lee, J. Kang, S. Lee et al., « Cost Effective Parallelbranch Spiral Inductor with Enhanced Quality Factor and Resonance Frequency, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp.87-90, 2007.
DOI : 10.1109/smic.2007.322776

J. Yoon, B. Kim, C. Han, E. Yoon, and C. Kim, Surface micromachined solenoid on-Si and on-glass inductors for RF applications, IEEE Electron Device Letters, vol.20, issue.9, pp.487-489, 1999.
DOI : 10.1109/55.784461

C. Tai and C. Liao, A Physical Model of Solenoid Inductors on Silicon Substrates, IEEE Transactions on Microwave Theory and Techniques, vol.55, issue.12, pp.2579-2585, 2007.
DOI : 10.1109/TMTT.2007.910069

Y. Yoon and M. G. Allen, Embedded conductor technology for micromachined RF elements, Journal of Micromechanics and Microengineering, vol.15, issue.6, p.1317, 2005.
DOI : 10.1088/0960-1317/15/6/025

L. Lin, W. Y. Yin, J. F. Mao, and E. K. Yang, « Performance Characterization of Circular Silicon Transformers, IEEE Trans. Magn, vol.44, pp.12-4684, 2008.

S. Katz, I. Brouk, S. Stolyarova, S. Shapira, and Y. Nemirovsky, High performance MEMS 0.18??m RF-CMOS transformers, High performance MEMS 0.18 ?m RF-CMOS transformers, pp.13-16, 2012.
DOI : 10.1016/j.mejo.2011.10.004

D. C. Laney, L. E. Larson, P. Chan, J. Malinowski, D. Harame et al., Microwave transformers, inductors and transmission lines implemented in an Si/SiGe HBT process, IEEE Transactions on Microwave Theory and Techniques, vol.49, issue.8, pp.1507-1510, 2001.
DOI : 10.1109/22.939934

S. Aliouane, A. B. Kouki, and E. R. Aigner, « Very high-Q solenoid RF inductors for SiP LTCC integration, Microwave Symposium Digest (MTT), pp.1-4, 2011.
DOI : 10.1109/mwsym.2011.5972902

K. Itoi, M. Sato, K. Okada, K. Masu, and E. T. Ito, Comparison of compact on-chip inductors embedded in wafer-level package, Proceedings Electronic Components and Technology, 2005. ECTC '05., pp.1578-1583, 2005.
DOI : 10.1109/ECTC.2005.1442000

X. Sun, O. Dupuis, D. Linten, G. Carchon, P. Soussan et al., High-<formula><tex>$Q$</tex></formula> Above-IC Inductors Using Thin-Film Wafer-Level Packaging Technology Demonstrated on 90-nm RF-CMOS 5-GHz VCO and 24-GHz LNA, IEEE Transactions on Advanced Packaging, vol.29, issue.4, pp.810-817, 2006.
DOI : 10.1109/TADVP.2006.884827

H. Yang, C. Wang, P. Zheng, and W. Wang, « On-chip high-Q inductor using wafer-level chip-scale package technology, Microsystems, Packaging, Assembly and Circuits Technology, pp.173-176, 2007.

C. Huang, T. Wei, T. Horng, J. Li, C. Chen et al., Hung, « Design and modeling of planar transformer-based silicon integrated passive devices for wireless applications, IEEE Radio Frequency Integrated Circuits Symposium, pp.167-170, 2009.

F. Zhang, Y. Miyahara, and B. P. Otis, Design of a 300-mV 2.4-GHz Receiver Using Transformer-Coupled Techniques, IEEE Journal of Solid-State Circuits, vol.48, issue.12, pp.12-3190, 2013.
DOI : 10.1109/JSSC.2013.2280835

B. Piernas, K. Nishikawa, K. Kamogawa, and T. Nakagawa, Araki, « High-Q factor three-dimensional inductors, IEEE Trans. Microw. Theory Tech, vol.50, issue.8, 2002.
DOI : 10.1109/tmtt.2002.801342

X. Huo, K. J. Chen, and P. C. Chan, « High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer, 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp.403-406, 2002.

G. J. Carchon, W. D. Raedt, and E. E. Beyne, Wafer-Level Packaging Technology for High-<tex>$Q$</tex>On-Chip Inductors and Transmission Lines, IEEE Transactions on Microwave Theory and Techniques, vol.52, issue.4, pp.1244-1251, 2004.
DOI : 10.1109/TMTT.2004.825656

A. Ghannam, L. Ourak, D. Bourrier, C. Viallon, and E. T. Parra, Efficent low cost process for single step metal forming of 3D interconnected above-IC inductors, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC), pp.367-370, 2011.
DOI : 10.1109/ESSDERC.2011.6044158

A. Ghannam, D. Bourrier, L. Ourak, C. Viallon, and E. T. Parra, 3-D Multilayer Copper Interconnects for High-Performance Monolithic Devices and Passives, IEEE Transactions on Components, Packaging and Manufacturing Technology, vol.3, issue.6, pp.935-942, 2013.
DOI : 10.1109/TCPMT.2013.2258073
URL : https://hal.archives-ouvertes.fr/hal-00920609

A. Ghannam, Conception et intégration " above IC " d'inductances à fort coefficient de surtension pour applications de puissance RF, 2010.

C. P. Yue and S. S. Wong, On-chip spiral inductors with patterned ground shields for Si-based RF ICs, IEEE Journal of Solid-State Circuits, vol.33, issue.5, pp.743-752, 1998.
DOI : 10.1109/4.668989

N. Chomnawang, Three-dimensional micromachined on-chip inductors for high frequency applications, 2002.

I. Aoki, S. D. Kee, and D. B. Rutledge, Distributed active transformer-a new power-combining and impedance-transformation technique, IEEE Transactions on Microwave Theory and Techniques, vol.50, issue.1, pp.316-331, 2002.
DOI : 10.1109/22.981284

A. M. Niknejad, Electromagnetics for High-Speed Analog and Digital Communication Circuits, 2007.
DOI : 10.1017/CBO9780511805738

A. M. Safwat, Study of microstrip mode in RF on-wafer probes, Microwave and Optical Technology Letters, vol.III, issue.4, pp.324-328, 2005.
DOI : 10.1002/mop.20812

B. Rejaei, A. Akhnoukh, M. Spirito, and E. L. Hayden, Effect of a Local Ground and Probe Radiation on the Microwave Characterization of Integrated Inductors, IEEE Transactions on Microwave Theory and Techniques, vol.55, issue.10, pp.2240-2247, 2007.
DOI : 10.1109/TMTT.2007.906469

C. Andrei, D. Gloria, F. Danneville, and P. Scheer, Dambrine, « Coupling on-wafer measurement errors and their impact on calibration and de-embedding up to 110 GHz for CMOS millimeter wave characterizations, IEEE International Conference on Microelectronic Test Structures ICMTS '07, pp.253-256, 2007.

K. Mohammadpour-aghdam, S. Brebels, A. Enayati, R. Faraji-dana, and G. A. Vandenbosch, RF probe influence study in millimeter-wave antenna pattern measurements, International Journal of RF and Microwave Computer-Aided Engineering, vol.56, issue.4, pp.413-420, 2011.
DOI : 10.1109/TAP.2008.929433

W. B. Kuhn and A. P. Boutz, Measuring and Reporting High Quality Factors of Inductors Using Vector Network Analyzers, IEEE Transactions on Microwave Theory and Techniques, vol.58, issue.4, pp.1046-1055, 2010.
DOI : 10.1109/TMTT.2010.2042843

W. La-caractérisation-du-transformateur-de-type, 20_S:20_2 révèle un gain maximum disponible Gmax de -0,46 dB En comparant à la littérature (Figure IV.25), ce résultat démontre la supériorité de ce transformateur par rapport à toutes les structures proposées. Une majeure partie des transformateurs réalisés à partir de technologies silicium CMOS

A. Ghannam, C. Viallon, D. Bourrier, and E. T. Parra, Dielectric microwave characterization of the SU-8 thick resin used in an above IC process, Microwave Conference, pp.1041-1044, 2009.
URL : https://hal.archives-ouvertes.fr/hal-01305557

W. B. Weir, Automatic measurement of complex dielectric constant and permeability at microwave frequencies, Proc. IEEE, pp.33-36, 1974.
DOI : 10.1109/PROC.1974.9382

I. J. Bahl and R. Garg, Simple and accurate formulas for a microstrip with finite strip thickness, Proc. IEEE, pp.1611-1612, 1977.
DOI : 10.1109/PROC.1977.10783

I. Zine-el-abidine, M. Okoniewski, and «. Cmos, CMOS-Compatible Micromachined Toroid and Solenoid Inductors With High <formula formulatype="inline"><tex>$Q$</tex></formula>-Factors, IEEE Electron Device Letters, vol.28, issue.3, pp.226-228, 2007.
DOI : 10.1109/LED.2007.891259

Y. Joung and M. G. Allen, Chip-to-Board Micromachining for Interconnect Layer Passive Components, IEEE Transactions on Components and Packaging Technologies, vol.30, issue.1, pp.15-23, 2007.
DOI : 10.1109/TCAPT.2007.892062

H. Lu, B. Pillans, J. Lee, and J. Lee, « High aspect ratio air core solenoid inductors using an improved UV-LIGA process with contrast enhancement material, Microsyst. Technol, vol.13, pp.3-4, 2007.
DOI : 10.1007/s00542-006-0174-3

S. Su, S. Wu, C. Lai, Y. Tai, W. Lin et al., Analysis and modeling of IPD for spiral inductor on glass substrate, International Conference on Microwave and Millimeter Wave Technology, pp.1274-1277, 2008.

V. N. Vanukuru and A. Chakravorty, Integrated layout optimized high-g inductors on high-resistivity SOI substrates for RF front-end modules, 2014 International Conference on Signal Processing and Communications (SPCOM), pp.1-5, 2014.
DOI : 10.1109/SPCOM.2014.6984015

J. Yook, D. Kim, and J. C. Kim, « High-Q trenched spiral inductors and low-loss low pass filters using through silicon via processes, Jpn. J. Appl. Phys, vol.53, issue.4S, pp.4-11, 2014.
DOI : 10.7567/jjap.53.04ee11

V. N. Vanukuru and A. Chakravorty, Design of Novel High-<inline-formula> <tex-math notation="TeX">$Q$ </tex-math></inline-formula> Multipath Parallel-Stacked Inductor, IEEE Transactions on Electron Devices, vol.61, issue.11, pp.3905-3909
DOI : 10.1109/TED.2014.2359497

L. Gu and X. Li, High-Performance CMOS-Compatible Solenoidal Transformers With a Concave-Suspended Configuration, IEEE Transactions on Microwave Theory and Techniques, vol.55, issue.6, pp.1237-1245, 2007.
DOI : 10.1109/TMTT.2007.897853

T. Biondi, A. Scuderi, E. Ragonese, and E. G. Palmisano, Analysis and modeling of layout scaling in silicon integrated stacked transformers, IEEE Transactions on Microwave Theory and Techniques, vol.54, issue.5, pp.2203-2210, 2006.
DOI : 10.1109/TMTT.2006.872788

K. Chong, Y. Xie, and . High, High-performance on-chip transformers, IEEE Electron Device Letters, vol.26, issue.8, pp.557-559, 2005.
DOI : 10.1109/LED.2005.851817

Y. Lin, H. Liang, T. Wang, and S. Lu, Temperature-dependence of noise figure of monolithic RF transformers on a thin (20 µm) silicon substrate, IEEE Electron Device Lett, vol.26, issue.3, pp.208-211, 2005.