Convertisseurs DC/DC à base de HFETs GaN pour applications spatiales

Guillaume Delamare 1
1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
LAAS - Laboratoire d'analyse et d'architecture des systèmes [Toulouse]
Abstract : Improving the compactness and efficiency of switching converters is a central problem in power electronics; It is even more so on board satellites where each gram and watt count. Each of the many radio transmitters and receivers that equip the telecommunications satellites needs to be powered by various voltages, converted in isolation from the main power distribution bus. Due to the heavy thermal, reliability and radiation resistance of electronic components in space applications, the degrees of freedom to improve power supplies are limited, in any case with the current technologies of qualified semiconductors (expensive and expensive). Set back from the performance of the state of the art). The relatively recent commercialization of normally locked gallium nitride (GaN) power transistors with electrical characteristics superior to those of the best silicon power MOSFETs is promising on this point. Indeed, their robustness intrinsic to radiations seems to allow their use in spatial converters. The aim of this work is to evaluate the possible contributions of this technology in the production of isolated DC / DC power supplies for typical telecommunication satellite payload equipment. Operation at higher switching frequencies with these higher performance components must at first reduce the congestion of converters with equal or better efficiency while still respecting the specification specific to each application. The relevance of this hypothesis and the most suitable implementation architecture have been explored for the low-power supply of an RF receiver, with realization and comparison of several demonstration models. In order to address higher power converters, a theoretical and experimental study of switching losses in the GaN transistor legs was carried out. A performance calculation program was developed in Python and implemented to identify the overall optimization of the dimensioning of a Dual Active Bridge converter for powering a power amplifier (250 W DC). A prototype mock-up was carried out and demonstrated the interest of the topology and the GaN components in this application, while highlighting the predominance of the high frequency losses of the magnetic components among the total losses of the converter. Finally, this last point turns out to be the main limitation of the precious engineering approach of optimal dimensioning by calculation: the current models of estimation of the losses in the magnetic elements prove unsatisfactory to predict the performances of This type of converter.
Document type :
Micro et nanotechnologies/Microélectronique. INP Toulouse, 2015. Français
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  • HAL Id : tel-01499458, version 1


Guillaume Delamare. Convertisseurs DC/DC à base de HFETs GaN pour applications spatiales. Micro et nanotechnologies/Microélectronique. INP Toulouse, 2015. Français. 〈tel-01499458〉



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