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L'assemblage a été caractérisé pour une tension d'alimentation de 100 V et un courant de charge de 11,7 A. La résistance de grille externe est de 10 ?. Le dV/dt de commutation est de 6,3 kV/µs. La fréquence HF est de 113,5 MHz et la fréquence MF de 1,56 MHz. Avec F HF on extrait une valeur d'inductance de maille de 4,2 nH. Là encore, la forme de tension met clairement en évidence la superposition des fréquences propres des mailles de commutation (113 MHz) et de filtrage en amont (1,5 MHz). La baisse de cette deuxième fréquence par rapport à la carte de référence provient d'une zone busbar beaucoup plus courte, Figure, vol.183 ,
, La Figure 184 montre les formes d'ondes pour le cas de l'assemblage proposé en version (a) avec une interconnexion par clip. La maille est composée de deux MOSFETs SiC. Le transistor low-side est commandé. La diode body du MOSFET high-side est utilisée en phase de roue libre. Nous mesurons une période T 0 du signal HF de 5,56 ns et en déduisons une ESL totale de 1,11 nH
, Chapitre 5 : Réalisation de convertisseurs prototypes et caractérisations électriques
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