Contribution aux analyses de fiabilité des transistors HEMTs GaN : exploitation conjointe du modèle physique TCAD et des stress dynamiques HF pour l'analyse des mécanismes de dégradation

Damien Saugnon 1
1 LAAS-MOST - Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : In the race to technologies development, disruptive wide bandgap GaN devices propose challenging performances for high power and high frequency applications. These technologies strongly mobilize academic and industrial partners in order to improve both the performances and the reliability aspects. Extensive efforts have made it possible to better identify, understand and control first order degradation mechanisms limiting the lifetime of the devices; however, the correlation (and fine physical analysis) of different degradation mechanisms still raises many questions, and it is essential to strengthen these studies by mean of multi-tool analysis approach. In this thesis, we propose a twofold analysis strategy. The first aspect concerns the implementation of a stress bench that allows the monitoring of numerous static and dynamic electrical markers, without removing the devices under test from their environment (in order to have a consistent data set during the period of the strain application). The second aspect consists in implementing a physical TCAD model of the technology under study, in order to calibrate the component before stress, and to tune the model at different periods of stress (still considering stress-dependent parameters potentially affecting the device). The first chapter is devoted to the presentation of the main reliability tests of GaN HEMTs, and of the electrical and/or structural defects identified in the literature; it thus refers to so-called non-invasive techniques (i.e. respecting the functional integrity of the component under test), and destructive techniques (i.e. not allowing additive electrical measurement). The second chapter presents the high frequency and thermal stress bench dedicated to this study; the addition of a vector network analyzer switching between the four test channels provides dynamic frequency data, in order to interpret the variations of the small signal electrical model of the devices under test at different stress periods.[...]
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Damien Saugnon. Contribution aux analyses de fiabilité des transistors HEMTs GaN : exploitation conjointe du modèle physique TCAD et des stress dynamiques HF pour l'analyse des mécanismes de dégradation. Electromagnétisme. Université Paul Sabatier - Toulouse III, 2018. Français. ⟨NNT : 2018TOU30164⟩. ⟨tel-01922315v2⟩

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