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, Références de l'Annexe 2
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Figure A4.2 : Simulation du profil de la zone de charge d'espace ZCE en comparaison du profil de concentration pour l'échantillon, J. Appl. Phys, vol.99, pp.13701-13702, 2006. ,
, Les fichiers de simulation sont détaillés ci-dessous
, Region // Création d'une région de 1x10 µm² de silicium nommée « Sil » (sdegeo:create-rectangle (position 0 0 0 ) (position 1 10 0 ) "Silicon
, ##" ) (sdegeo:define-contact-set "Cathode" 4 (color:rgb 1 1 1 ) "##" ) (sdegeo:define-2d-contact, Contact // Définition des contacts Anode et Cathode puis placement géographique (sdegeo:define-contact-set "Anode" 4 (color:rgb 1 0 0 )
Line" (position 0 0 0) (position 1 0 0) ) (sdedr:define-1d-external-profile "Substrat_Definition ,
, µm² sur toute la région Sil et une seconde de 0,05x0,05 µm² dans une région proche de la surface (sdedr:define-refeval-window "Struct
Voltage= @Va@ }) ,
, TCAD Sentaurus Process User Guide, version I-2013.12; Synopsis, 2013.
Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation, Materials Science Forum, pp.525-528, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-01921860
Identification and localization of defects induced by nanosecond excimer laser annealed in silicon ,
A Differential Hall Effect method with sub-nanometre resolution for active dopant concentraton profiling in ultrathin doped Si1-xGex and Si layers, Beilstein Journal of Nanotechnology, vol.9, pp.1926-1939, 2018. ,
Magnetic Field Effects in X-Ray Damaged NPB and MADN OLEDs, IEEE Transactions on Magnetics, vol.99, pp.1-4, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-02051962
Diamond Schottky diodes operating at 473 K, EPE Journal, vol.27, pp.118-124, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-01618095
Defects Investigation in Nanosecond laser Annealed Crystalline Silicon: Identification and Localization, 22nd International Conference on Ion Implantation Technology, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-01803955
Influence of insitu x-ray exposure on the magnetotransport properties of NPB and MADN based blue OLED structures, International Conference on Magnetism, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-02140836
Influence of insitu x-ray exposure on the magnetotransport properties of NPB and MADN based blue OLED structures, 14th International Conference On Organic Electronics, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-02140836
Evaluating depth distribution of excimer laser induced defects in silicon using micro-photoluminescence spectroscopy, MRS Fall Meeting, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-01555348
Effect of growth-induced X-ray exposure on the transport, magnetotransport and luminescence properties of OLEDs, E-MRS Spring Meeting, 2017. ,
,
Defect investigation of excimer laser annealed silicon, 11th IEEE Nanotechnology Materials and Devices Conference, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01343978
Etude des défauts induits par recuit laser excimer sur silicium, Journées Nationales du Réseau Doctoral en Micro-nanoélectronique, 2017. ,
Influence d'un champ magnétique sur les propriétés optiques et de transport d'OLEDS bleues, Deuxième Congrès National Science et Technologie des Systèmes pi-Conjugués, 2017. ,
Diodes Schottky diamant fonctionnant à 200 °C, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01245628
Les défauts induits par recuit laser excimer, 2018. ,
Défauts induits par recuit laser nanoseconde, 2018. ,
Investigation of the role of oxygen, 2018. ,
Les défauts induits par recuit laser excimer, 2018. ,
Optical defects generated by laser doping, 2017. ,
Evaluating depth distribution of excimer laser induced defects in silicon using micro-photoluminescence spectroscopy, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-01555348
Samples homogeneity after LTA, IMM-CNR), 2017. ,
001 loops defects PL signatures, 2016. ,
Inverstigation of the role of oxygen, STMicroelectronics, SCREEN-LASSE, IMM-CNR), 2016. ,
i) Optimisation et modélisation du procédé de recuit laser. (ii) Applications industrielles (amélioration de couches dopées en termes d'activation de dopant et réduction de défauts), 2018. ,
i) Propriétés de transport de structures 1D formées par recuit laser à excimère : impact des paramètres de recuit. (ii) Etude du profil de fusion sur structures 2D recuites par laser à excimère, Délivrable D5, Février, 2018. ,
Tabata et I. Toque-Tresonne, "(i) Propriétés physiques de structures 1D formées par recuit laser à excimère : impact des paramètres de recuit. (ii) Propriétés de transport de structures 1D formées par recuit laser à excimère : suivi des étapes de fabrication des transistors MOS, 2017. ,
Propriétés physiques de structures 1D formées par recuit laser à excimère : mise en place d'une méthodologie de mesure et identification des défauts, 2016. ,
, Propriétés électriques de jonctions formés par recuit laser excimer : structures de test de type MOS, 2016.
Jonctions formés par recuit laser excimer : premiers résultats expérimentaux sur échantillons non « patternés, 2016. ,