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Analyse et modélisation des mécanismes de dégradation de grille des transistors à haute mobilité électronique (HEMT) de type AlGaN/GaN

Oana Lazar 1
1 LAAS-MOST - Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : The recent introduction of wide bandgap materials revolutionizes the RF field of power modules. Due to the high-power levels for telecommunication frequency bands, GaN technologies represent nowadays a major integrated alternative which is believed to gradually replace III-V GaAs technologies (SSPA amplifiers), and even to compete with wave tubes technologies (TWTA amplifiers). Development of GaN material in the last decade is proved by the market release of several GaN versions, such as GH50 and GH25 from UMS. These batches are issued from technological versions that feature delicate mastering of the various degradation mechanisms induced by thermal, electrical or RF stress: IDQ tests, HTRB, HTOL, etc. The complexity of the involved processes (thermal, piezoelectric, ...) often makes difficult the analysis of mechanisms that caused the identified damage, and it is necessary to establish a rigorous multi-physics study in order to identify the sensitive electrical and technological parameters. The analysis associated with this work are based on cross non-invasive measurements, in transient and spectral domains. This purely metrological approach reaches its limits insofar as the crossing between non-destructive and destructive data cannot be applied to the same components, nor before/after application of a stress. Therefore, the objective of this thesis consists in giving some key indicators which can be useful when converging from these industrial and under development technologies to more robust and more efficient processes. In this way, we will be able to improve also our knowledge concerning the multitude and poorly controlled degradation kinetics. The identified technologies for technological support are the qualified or under development dies, issued from UMS: GH50 and GH25. On each of these versions, we can identify limiting mechanisms both at instant t0, and during evolution under stress. From technology maturation point of view, we can identify sensitive areas that limit operational security zones of the devices, and enable technologists to improve the technological processes. In addition, this dual input technology will allow us to implement the working methods that we have developed in this thesis. Transient techniques (non-invasive), such as I-V-T DC and pulsed measurements, will be analyzed and correlated with low frequency noise measurements (in frequency domain), on witness (virgin) components. By the means of electrical measurements, gate lag and lag drain phenomena can be identified, which are the main limiting factors for power applications and pulsed radar applications. Low frequency noise characterizations are recognized as reliable indicators for the analysis of defects in different areas (active or not) of the devices under test. The analysis and the location of these noise sources is fundamental for the next step. Then, these associated measurements and modeling techniques are used to study stressed (aged) components. On one hand, the evolution of electric linearity characteristics allows the comprehension of the stress consequences on the operational behavior of the device. On the other hand, the evolution of noise spectra allows the access to a corpuscular view of the defect that initiates the lowering of the transistor performances. These evolutions constitute a reliable database, which can be used in order to better understand the immediate and slow changes in reversible and irreversible degradation process of the devices under test: modification of the Schottky diode, presence of acceptors traps, mobile and fixed charges, slow and fast traps phenomena.
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Submitted on : Thursday, August 27, 2020 - 2:46:11 PM
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Oana Lazar. Analyse et modélisation des mécanismes de dégradation de grille des transistors à haute mobilité électronique (HEMT) de type AlGaN/GaN. Electromagnétisme. Université Paul Sabatier - Toulouse III, 2018. Français. ⟨NNT : 2018TOU30349⟩. ⟨tel-02199849v2⟩



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