, Nous attribuons ce type de conduction aux liaisons pendantes de surfaces, chargées électriquement. Le courant Ilow circule du contact de grille vers le contact de source, horizontalement, en surface du transistor. De ce fait, nous obtenons des valeurs résistives très élevées pour ce modèle

. Ensuite, Nous avons modélisé cette transition par un composante intermédiaire : modèle medium-low -ML, puisque la variation des paramètres électriques (n et ?B) est spécifique à une diode imparfaite, mais le courant de saturation (I0) est quasi constant

. Troisièmement, on passe sur le mécanisme principal de conduction gérant la diode Schottky de grille seule : le modèle medium-high ? MH, avec un n est très proche de 1, et le ?B le plus élevé parmi les quatre modèles. Néanmoins, la résistance série assez élevée reste un témoignage d'un chemin de collection de source ne

. Enfin, nous identifions un dernier mécanisme de conduction spécifique à la diode Schottky principale : modèle high -H. Ce courant traverse verticalement toutes les couches du HEMT, jusqu'au canal d'électrons bidimensionnel (2DEG), en se refermant

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