J. Lombardi and G. Marquenet, MÉTHODE DE CALCUL D'UN CHENAL EN ESCALIER ET À BIEFS AFFOUILLABLES POUR LA RÉGULARISATION D'UN TORRENT, La Houille Blanche, pp.730-746, 1950.

Y. Bernard, La netnographie : une nouvelle méthode d?enquête qualitative basée sur les communautés virtuelles de consommation, Décisions Marketing, vol.36, pp.49-62, 2004.

, Graphique 4.12. Programmes nationaux du marché du travail spécifiquement verts mis en oeuvre par les pays de l?OCDE, 2010

A. Maurel, Titre I. La liberté de la recherche, socle de la liberté des chercheurs dans le processus de recherche, Les chercheurs saisis par la norme, pp.61-173

, REMARQUES SUR LE CHOIX DES TEXTES, Le métier de sociologue, pp.108-108, 2005.

G. Appell and M. David, L?observation des enfants et l?organisation de leur vie en fonction de cette observation, Observer le jeune enfant en lieu d'accueil, p.79, 2019.

G. Séguier, F. Labrique, and P. Delarue, , 2015.

M. Al-shemmary, Power electronics is the technology to convert and control electric power from one form to another using electronic power Devices, 2012.

J. D. Irwin, Academic Press Series in Engineering, Mechanical Engineer's Handbook, p.ii, 2001.

H. Rizk, Conception et réalisation d'un interrupteur bidirectionnel silicium pour des applications secteur: le transistor BipAC, 2017.

S. Hamady, New concepts for normally-off power Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT), 2014.
URL : https://hal.archives-ouvertes.fr/tel-01132563

D. Othman, Etude d'interrupteurs en carbure de silicium et potentiel d'utilisation dans des applications aéronautiques, Université PARIS-SACLAY, 2015.

C. Potier, Caractérisation et modélisation des pièges par des mesures de dispersion bassefréquence dans les technologies HEMT InAIN/GaN pour l'amplification de puissance en gamme millimétrique, 2016.

E. A. Alam, Développement de briques technologiques pour la réalisation de transistors MOS de puissance en Nitrure de Gallium, 2011.

R. Juza and H. Hahn, Über die Kristallstrukturen von Cu3N, GaN und InN Metallamide und Metallnitride, Zeitschrift für anorganische und allgemeine Chemie, vol.239, issue.3, pp.282-287, 1938.

H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer, Applied Physics Letters, vol.48, issue.5, pp.353-355, 1986.

H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI), Japanese Journal of Applied Physics, vol.28, issue.Part 2, No. 12, pp.L2112-L2114, 1989.

M. A. Khan, J. M. Van-hove, J. N. Kuznia, and D. T. Olson, High electron mobility GaN/AlxGa1?xN heterostructures grown by low?pressure metalorganic chemical vapor deposition, Applied Physics Letters, vol.58, issue.21, pp.2408-2410, 1991.

M. Khan, J. N. Kuznia, A. R. Bhattarai, and D. T. Olson, Metal semiconductor field effect transistor based on single crystal GaN, Appl. Phys. Lett, vol.62, issue.15, pp.1786-1787, 1993.

W. Chikhaoui, Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors

, Oxide and Nitride Semiconductors, Oxide and Nitride Semiconductors: Processing, Properties, and Applications, 2009.

S. Fakhfakh, Nouvelles méthodes de caractérisation et de modélisation non-linéaire électrothermique des effets de piège dans la technologie HEMT GaN pour l'étude de la stabilité pulse à pulse dans les applications radar, 2018.

, Polarization Effects in Semiconductors, 2008.

O. , Un modèle d'équilibre général pour analyser les effets d'une inondation de la Seine, 2014.

C. Kittel and H. Y. Fan, Introduction to Solid State Physics, American Journal of Physics, vol.25, issue.5, pp.330-330, 1957.

S. Bouzid-driad, Liste des objectifs du Millénaire pour le Développement et Cibles et indicateurs de l?objectif 8, Groupe de Réflexion sur le Retard Pris dans la Réalisation des Objectifs du Millénaire pour le Développement Rapport de 2013, pp.9-10, 2013.

J. Fonder, Analyse des mécanismes de défaillance dans les transistors de puissance radiofréquences HEMT AlGaN/GaN, 2012.

H. Lakhdhar, N. Labat, A. Curutchet, N. Defrance, M. Lesecq et al., Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress, Microelectronics Reliability, vol.64, pp.594-598, 2016.
URL : https://hal.archives-ouvertes.fr/hal-02462684

T. Ko, D. Lin, C. Lin, C. W. Chang, J. C. Zhang et al., High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer, Journal of Crystal Growth, vol.464, pp.175-179, 2017.

M. Abdelmoumene, Etude et simulation d`un transistor AlGaNGaN HEMT, 2012.

A. Asgari, M. Kalafi, and L. Faraone, The effects of GaN capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructures, Physica E: Low-dimensional Systems and Nanostructures, vol.25, issue.4, pp.431-437, 2005.

T. D. Nguyen, Réalisation et caractérisation de HEMTs AlGaN/GaN sur silicium pour applications à haute tension, 2013.

H. Schulz and K. H. Thiemann, Crystal structure refinement of AlN and GaN, Solid State Communications, vol.23, issue.11, pp.815-819, 1977.

R. Meunier, Optimization of the elaboration of insulating layers for the gate structures and the passivation of MIS-HEMT transistors on GaN, 2016.
URL : https://hal.archives-ouvertes.fr/tel-01376016

F. Bernardini, V. Fiorentini, and D. Vanderbilt, Spontaneous polarization and piezoelectric constants of III-V nitrides, Physical Review B, vol.56, issue.16, pp.R10024-R10027, 1997.

O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann et al., Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures, Journal of Applied Physics, vol.87, issue.1, pp.334-344, 2000.

J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. Denbaars, J. S. Speck et al., Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors, Applied Physics Letters, vol.77, issue.2, pp.250-252, 2000.

B. Bakeroot, S. You, T. Wu, J. Hu, M. Van-hove et al., On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors, Journal of Applied Physics, vol.116, issue.13, p.134506, 2014.

I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, R. Vetury, B. Heying et al., Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy, Journal of Applied Physics, vol.86, issue.8, pp.4520-4526, 1999.

P. Nakkala, Pulsed I-V and RF characterization and modeling of AIGaN HEMTs and Graphene FETs, 2015.
URL : https://hal.archives-ouvertes.fr/tel-01175525

G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco et al., Reliability issues of Gallium Nitride High Electron Mobility Transistors, International Journal of Microwave and Wireless Technologies, vol.2, issue.1, pp.39-50, 2010.

A. Benvegnu, Trapping and Reliability investigations in GaN-based HEMTs, 2017.
URL : https://hal.archives-ouvertes.fr/tel-01643704

M. Bouya, Les Seigneuries dans l?espace Plantagenêt (c.1150 ? c.?1250), Médiévales, vol.59, issue.59, p.209, 2010.

C. Miccoli, V. C. Martino, S. Reina, and S. Rinaudo, Trapping and Thermal Effects Analysis for AlGaN/GaN HEMTs by Means of TCAD Simulations, IEEE Electron Device Letters, vol.34, issue.9, pp.1121-1123, 2013.

F. Chiu, A Review on Conduction Mechanisms in Dielectric Films, Advances in Materials Science and Engineering, vol.2014, pp.1-18, 2014.

A. M. Ozbek, Measurement of Impact Ionization Coefficients in Gallium Nitride, 2011.

T. Palacios and U. K. Mishra, AlGaN/GaN High Electron Mobility Transistors, Nitride Semiconductor Devices: Principles and Simulation, pp.211-233
URL : https://hal.archives-ouvertes.fr/hal-02165980

F. Fornetti, M. A. Beach, and K. A. Morris, Time and frequency domain analysis of commercial GaN HEMTs operated in pulsed mode, 2009 Asia Pacific Microwave Conference, 2009.

R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs, IEEE Transactions on Electron Devices, vol.48, issue.3, pp.560-566, 2001.

A. H. , Large-Signal Modeling of GaN Devices for Designing High Power Amplifiers of Next Generation Wireless Communication Systems, Mobile and Wireless Communications Network Layer and Circuit Level Design, 2010.

Y. Okamoto, Y. Ando, K. Hataya, T. Nakayama, H. Miyamoto et al., Improved Power Performance for a Recessed-Gate AlGaN?GaN Heterojunction FET With a Field-Modulating Plate, IEEE Transactions on Microwave Theory and Techniques, vol.52, issue.11, pp.2536-2540, 2004.

S. Karmalkar and U. K. Mishra, Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate, IEEE Transactions on Electron Devices, vol.48, issue.8, pp.1515-1521, 2001.

J. S. Moon, . Shihchang-wu, D. Wong, I. Milosavljevic, A. Conway et al., Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications, IEEE Electron Device Letters, vol.26, issue.6, pp.348-350, 2005.

D. Mistele, O. Katz, A. Horn, G. Bahir, and J. Salzman, Engineering and impact of surface states on AlGaN/GaN-based hetero field effect transistors, Semiconductor Science and Technology, vol.20, issue.9, pp.972-978, 2005.

G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini et al., Surface-Related Drain Current Dispersion Effects in AlGaN?GaN HEMTs, IEEE Transactions on Electron Devices, vol.51, issue.10, pp.1554-1561, 2004.

S. A. Albahrani, J. G. Rathmell, and A. E. Parker, Characterizing drain current dispersion in GaN HEMTs with a new trap model, 2009 European Microwave Integrated Circuits Conference (EuMIC), pp.339-342, 2009.

H. Huang, Y. C. Liang, G. S. Samudra, T. Chang, and C. Huang, Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs, IEEE Transactions on Power Electronics, vol.29, issue.5, pp.2164-2173, 2014.

A. Brannick, N. A. Zakhleniuk, B. K. Ridley, J. R. Shealy, W. J. Schaff et al., Influence of Field Plate on the Transient Operation of the AlGaN/GaN HEMT, IEEE Electron Device Letters, vol.30, issue.5, pp.436-438, 2009.

A. Wang, S. Martin-horcajo, M. J. Tadjer, and F. Calle, Simulation of temperature and electric field-dependent barrier traps effects in AlGaN/GaN HEMTs, Semiconductor Science and Technology, vol.30, issue.1, p.015010, 2014.

I. Nifa, Caractérisation et modélisation du gaz 2D des dispositifs MIS-HEMTs sur GaN, Université Grenoble Alpes, 2018.

S. C. Binari, K. Ikossi, J. A. Roussos, W. Kruppa, . Doewon-park et al., Trapping effects and microwave power performance in AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices, vol.48, issue.3, pp.465-471, 2001.

P. B. Klein and S. C. Binari, Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors, Journal of Physics: Condensed Matter, vol.15, issue.44, pp.R1641-R1667, 2003.

T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S. P. Denbaars et al., AlGaN/GaN high electron mobility transistors with InGaN back-barriers, IEEE Electron Device Letters, vol.27, issue.1, pp.13-15, 2006.

M. A. Khan, J. N. Kuznia, M. S. Shur, and Q. C. Chen, Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias, Electronics Letters, vol.30, issue.25, pp.2175-2176, 1994.

H. Zhang, E. J. Miller, and E. T. Yu, Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N?GaN grown by molecular-beam epitaxy, Journal of Applied Physics, vol.99, issue.2, p.023703, 2006.

E. Arslan, S. Bütün, and E. Ozbay, Leakage current by Frenkel?Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures, Applied Physics Letters, vol.94, issue.14, p.142106, 2009.

G. K. Wachutka, Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol.9, issue.11, pp.1141-1149, 1990.

R. Menozzi, G. A. Umana-membreno, B. D. Nener, G. Parish, G. Sozzi et al., Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances, IEEE Transactions on Device and Materials Reliability, vol.8, issue.2, pp.255-264, 2008.

Y. C. Chou, D. Leung, I. Smorchkova, M. Wojtowicz, R. Grundbacher et al., Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting, Microelectronics Reliability, vol.44, issue.7, pp.1033-1038, 2004.

P. Valizadeh and D. Pavlidis, Investigation of the Impact of Al Mole-Fraction on the Consequences of RF Stress on<tex>$hbox Al_xhbox Ga_1-xhbox N/GaN$</tex>MODFETs, IEEE Transactions on Electron Devices, vol.52, issue.9, pp.1933-1939, 2005.

Y. Inoue, S. Masuda, M. Kanamura, T. Ohki, K. Makiyama et al., Degradation-Mode Analysis for Highly Reliable GaN-HEMT, 2007 IEEE/MTT-S International Microwave Symposium, pp.639-642, 2007.

G. Koley, V. Tilak, L. F. Eastman, and M. G. Spencer, Slow transients observed in AlGaN HFETs: Effects of SiN/sub x/ passivation and UV illumination, IEEE Transactions on Electron Devices, vol.50, issue.4, pp.886-893, 2003.

H. Kim, Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate, Phys. Status Solidi A, vol.188, issue.1, pp.203-206, 2001.

A. Stocco, Reliability and failure mechanisms of GaN HEMT devices suitable for high-frequency and high-power applications, 2012.

M. Meneghini, O. Hilt, C. Fleury, R. Silvestri, M. Capriotti et al., Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure, Microelectronics Reliability, vol.58, pp.177-184, 2016.

M. Meneghini, G. Cibin, M. Bertin, G. A. Hurkx, P. Ivo et al., OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown, IEEE Transactions on Electron Devices, vol.61, issue.6, pp.1987-1992, 2014.

M. Meneghini, I. Rossetto, C. De-santi, F. Rampazzo, A. Tajalli et al., Reliability and failure analysis in power GaN-HEMTs: An overview, 2017 IEEE International Reliability Physics Symposium (IRPS), 2017.

S. Demirtas, J. Joh, and J. A. Alamo, High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate, Microelectronics Reliability, vol.50, issue.6, pp.758-762, 2010.

I. Rossetto, M. Meneghini, S. Pandey, M. Gajda, G. A. Hurkx et al., Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation, IEEE Transactions on Electron Devices, vol.64, issue.1, pp.73-77, 2017.

M. Meneghini, I. Rossetto, F. Hurkx, J. Sonsky, J. A. Croon et al., Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress, IEEE Transactions on Electron Devices, vol.62, issue.8, pp.2549-2554, 2015.

W. A. Sasangka, G. J. Syaranamual, Y. Gao, R. I-made, C. L. Gan et al., Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation, Microelectronics Reliability, vol.76-77, pp.287-291, 2017.

S. Demirtas and J. A. Del-alamo, Effect of trapping on the critical voltage for degradation in GaN high electron mobility transistors, 2010 IEEE International Reliability Physics Symposium, pp.134-138, 2010.

K. H. Ploog and O. Brandt, Doping of group III nitrides, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.16, issue.3, pp.1609-1614, 1998.

N. Baron, Optimisation de l'épitaxie sous jets moléculaires d'hétérostructures à base de GaN : application aux transistors à haute mobilité d'électrons sur substrat silicium, 2009.

M. R. Ramdani, M. Chmielowska, Y. Cordier, S. Chenot, and F. Semond, Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates, Solid-State Electronics, vol.75, pp.86-92, 2012.

F. Brunner, E. Bahat-treidel, M. Cho, C. Netzel, O. Hilt et al., Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs, physica status solidi (c), vol.8, issue.7-8, pp.2427-2429, 2011.

G. Parish, S. Keller, S. P. Denbaars, and U. K. Mishra, SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1?xN, Journal of Electronic Materials, vol.29, issue.1, pp.15-20, 2000.

D. D. Koleske, A. E. Wickenden, R. L. Henry, and M. E. Twigg, Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN, Journal of Crystal Growth, vol.242, issue.1-2, pp.55-69, 2002.

A. E. Wickenden, D. D. Koleske, R. L. Henry, M. E. Twigg, and M. Fatemi, Resistivity control in unintentionally doped GaN films grown by MOCVD, Journal of Crystal Growth, vol.260, issue.1-2, pp.54-62, 2004.

J. Chen, U. Forsberg, and E. Janzén, Impact of residual carbon on two-dimensional electron gas properties in AlxGa1?xN/GaN heterostructure, Applied Physics Letters, vol.102, issue.19, p.193506, 2013.

P. Gamarra, C. Lacam, M. Tordjman, J. Splettstösser, B. Schauwecker et al., Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices, Journal of Crystal Growth, vol.414, pp.232-236, 2015.

H. Yacoub, C. Mauder, S. Leone, M. Eickelkamp, D. Fahle et al., Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers, IEEE Transactions on Electron Devices, vol.64, issue.3, pp.991-997, 2017.

C. Poblenz, P. Waltereit, S. Rajan, S. Heikman, U. K. Mishra et al., Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.22, issue.3, p.1145, 2004.

W. Z. Wang, S. L. Selvaraj, K. T. Win, S. B. Dolmanan, T. Bhat et al., Effect of Carbon Doping and Crystalline Quality on the Vertical Breakdown Characteristics of GaN Layers Grown on 200-mm Silicon Substrates, Journal of Electronic Materials, vol.44, issue.10, pp.3272-3276, 2015.

D. Kim, C. Won, H. Kang, Y. Kim, Y. T. Kim et al., Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer, Semiconductor Science and Technology, vol.30, issue.3, p.035010, 2015.

E. Bahat-treidel, F. Brunner, O. Hilt, E. Cho, J. Wurfl et al., AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$, IEEE Transactions on Electron Devices, vol.57, issue.11, pp.3050-3058, 2010.

A. Armstrong, A. R. Arehart, D. Green, U. K. Mishra, J. S. Speck et al., Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon, Journal of Applied Physics, vol.98, issue.5, p.053704, 2005.

A. F. Wright, Substitutional and interstitial carbon in wurtzite GaN, Journal of Applied Physics, vol.92, issue.5, pp.2575-2585, 2002.

A. Armstrong, A. R. Arehart, B. Moran, S. P. Denbaars, U. K. Mishra et al., Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition, Applied Physics Letters, vol.84, issue.3, pp.374-376, 2004.

U. Honda, Y. Yamada, Y. Tokuda, and K. Shiojima, Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies, Japanese Journal of Applied Physics, vol.51, issue.4S, p.04DF04, 2012.

J. L. Lyons, A. Janotti, and C. G. Van-de-walle, Carbon impurities and the yellow luminescence in GaN, Applied Physics Letters, vol.97, issue.15, p.152108, 2010.

I. Rossetto, F. Rampazzo, M. Meneghini, M. Silvestri, C. Dua et al., Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs, Microelectronics Reliability, vol.54, issue.9-10, pp.2248-2252, 2014.

M. Huber, M. Silvestri, L. Knuuttila, G. Pozzovivo, A. Andreev et al., Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors, Applied Physics Letters, vol.107, issue.3, p.032106, 2015.

G. Meneghesso, M. Meneghini, D. Bisi, R. Silvestri, A. Zanandrea et al., GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues, ECS Transactions, vol.58, issue.4, pp.187-198, 2013.

D. Bisi, A. Stocco, I. Rossetto, M. Meneghini, F. Rampazzo et al., Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs, Microelectronics Reliability, vol.55, issue.9-10, pp.1662-1666, 2015.

M. J. Uren, M. Silvestri, M. Casar, G. A. Hurkx, J. A. Croon et al., Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths, IEEE Electron Device Letters, vol.35, issue.3, pp.327-329, 2014.

W. Bi, H. Kuo, P. Ku, and B. Shen, Handbook of GaN Semiconductor Materials and Devices, Handbook of GaN Semiconductor Materials and Devices, 2017.

D. Bisi, M. Meneghini, M. Van-hove, D. Marcon, S. Stoffels et al., Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate, physica status solidi (a), vol.212, issue.5, pp.1122-1129, 2015.

M. Meneghini, G. Meneghesso, and E. Zanoni, Power GaN Devices, Power GaN Devices: Materials, Applications and Reliability, 2017.

P. Moens, P. Vanmeerbeek, A. Banerjee, J. Guo, C. Liu et al., On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pp.37-40, 2015.

S. Stoffels, M. Zhao, R. Venegas, P. Kandaswamy, S. You et al., The physical mechanism of dispersion caused by AlGaN/GaN buffers on Si and optimization for low dispersion, 2015 IEEE International Electron Devices Meeting (IEDM), pp.35-39, 2015.

S. Kaneko, M. Kuroda, M. Yanagihara, A. Ikoshi, H. Okita et al., Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pp.41-44, 2015.

K. Tanaka, H. Umeda, H. Ishida, M. Ishida, and T. Ueda, Effects of hole traps on the temperature dependence of current collapse in a normally-OFF gate-injection transistor, Japanese Journal of Applied Physics, vol.55, issue.5, p.054101, 2016.

K. Tanaka, T. Morita, H. Umeda, S. Kaneko, M. Kuroda et al., Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor, Applied Physics Letters, vol.107, issue.16, p.163502, 2015.

R. Vetury, I. P. Smorchkova, C. R. Elsass, B. Heying, S. Keller et al., Polarization induced 2DEG in MBE grown AlGaN/GaN HFETs: On the origin, DC and RF characterization, MRS Proceedings, vol.622, 2000.

P. Nakkala, S. Piotrowicz, P. Bouysse, E. Bergeault, M. Campovecchio et al., Pulsed characterisation of trapping dynamics in AlGaN/GaN HEMTs, Electronics Letters, vol.49, issue.22, pp.1406-1407, 2013.
URL : https://hal.archives-ouvertes.fr/hal-02286811

D. V. Lang, Deep?level transient spectroscopy: A new method to characterize traps in semiconductors, Journal of Applied Physics, vol.45, issue.7, pp.3023-3032, 1974.

A. R. Peaker, V. P. Markevich, and J. Coutinho, Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors, Journal of Applied Physics, vol.123, issue.16, p.161559, 2018.

D. J. Morrison, K. P. Hilton, M. J. Uren, N. G. Wright, C. M. Johnson et al., Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes, Mater. Sci. Eng. B, issue.98, pp.531-536, 1999.

A. Chantre, G. Vincent, and D. Bois, Deep-level optical spectroscopy in GaAs, Physical Review B, vol.23, issue.10, pp.5335-5359, 1981.

A. Alkauskas, M. D. Mccluskey, and C. G. Van-de-walle, Tutorial: Defects in semiconductors?Combining experiment and theory, Journal of Applied Physics, vol.119, issue.18, p.181101, 2016.

X. Zhou, Z. Feng, Y. Wang, G. Gu, X. Song et al., Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor, Chinese Physics B, vol.24, issue.4, p.048503, 2015.

W. Liao, C. Chen, C. Hsu, Y. Hsin, and J. Chyi, Analysis of Threshold Voltage Shift in AlGaN/GaN Heterostructure Field-Effect Transistors with Different Buffer Layers, Journal of The Electrochemical Society, vol.162, issue.8, pp.H522-H526, 2015.

J. Joh, J. A. Del-alamo, and J. Jimenez, A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors, IEEE Electron Device Letters, vol.29, issue.7, pp.665-667, 2008.

W. Saito, T. Nitta, Y. Kakiuchi, Y. Saito, K. Tsuda et al., Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure, IEEE Transactions on Electron Devices, vol.54, issue.8, pp.1825-1830, 2007.

R. Chu, 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance, IEEE Electron Device Lett, vol.32, issue.5, pp.632-634, 2011.

J. Everts, J. Das, J. Van-den-keybus, J. Genoe, M. Germain et al., A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon, 2010 IEEE Energy Conversion Congress and Exposition, 2010.

Y. Wu, M. Jacob-mitos, M. L. Moore, and S. Heikman, A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz, IEEE Electron Device Letters, vol.29, issue.8, pp.824-826, 2008.

E. Marcault, D. Tremouilles, K. Isoird, F. Morancho, and M. Gavelle, Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading, 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe), 2016.
URL : https://hal.archives-ouvertes.fr/hal-01556254

E. Marcault, D. Tremouilles, K. Isoird, F. Morancho, and M. Gavelle, Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading, 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe), 2016.
URL : https://hal.archives-ouvertes.fr/hal-01556254

B. Lu, T. Palacios, D. Risbud, S. Bahl, and D. I. Anderson, Extraction of Dynamic On-Resistance in GaN Transistors: Under Soft- and Hard-Switching Conditions, 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pp.1-4, 2011.

E. Marcault and D. Trémouilles, Dispositif de caracterisation d'un commutateur de puissance, 2017.

M. Marso, M. Wolter, P. Javorka, P. Kordo?, and H. Lüth, Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy, Applied Physics Letters, vol.82, issue.4, pp.633-635, 2003.

A. Chini, G. Meneghesso, M. Meneghini, F. Fantini, G. Verzellesi et al., Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers, IEEE Transactions on Electron Devices, vol.63, issue.9, pp.3473-3478, 2016.

M. J. Uren, Back Bias Effects in AlGaN/GaN HFETs, Phys. Status Solidi A, vol.188, issue.1, pp.195-198, 2001.

C. Zhou, Q. Jiang, S. Huang, and K. J. Chen, Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si structures, 2012 24th International Symposium on Power Semiconductor Devices and ICs, pp.245-248, 2012.

M. Shur, B. Gelmont, and M. Asif-khan, Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN, Journal of Electronic Materials, vol.25, issue.5, pp.777-785, 1996.

T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, and K. Maezawa, A study on current collapse in AlGaN/GaN HEMTs induced by bias stress, IEEE Transactions on Electron Devices, vol.50, issue.10, pp.2015-2020, 2003.

A. D. Koehler, A. Gupta, . Min-chu, S. Parthasarathy, K. J. Linthicum et al., Extraction of AlGaN/GaN HEMT Gauge Factor in the Presence of Traps, IEEE Electron Device Letters, vol.31, issue.7, pp.665-667, 2010.

M. Martens, J. Schlegel, P. Vogt, F. Brunner, R. Lossy et al., High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching, Applied Physics Letters, vol.98, issue.21, p.211114, 2011.

Y. Huang, D. J. Chen, H. Lu, H. B. Shi, P. Han et al., Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal photodetectors, Applied Physics Letters, vol.96, issue.24, p.243503, 2010.

S. J. Chang, Nitride-based 2DEG photodetectors with a large AC responsivity, Solid-State Electron, vol.47, issue.11, pp.246-252, 2003.

Y. Chang, Effects of illumination on the excess carrier dynamics and variations of the surface states in an AlGaN/GaN heterostructure, Journal of Applied Physics, vol.107, issue.3, p.033706, 2010.

M. T. Hirsch, J. A. Wolk, W. Walukiewicz, and E. E. Haller, Persistent photoconductivity in n-type GaN, Applied Physics Letters, vol.71, issue.8, pp.1098-1100, 1997.

G. Koley, H. Cha, J. Hwang, W. J. Schaff, L. F. Eastman et al., Perturbation of charges in AlGaN?GaN heterostructures by ultraviolet laser illumination, Journal of Applied Physics, vol.96, issue.8, pp.4253-4262, 2004.

Z. H. Zaidi and P. A. Houston, Highly Sensitive UV Detection Mechanism in AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices, vol.60, issue.9, pp.2776-2781, 2013.

J. Z. Li, J. Y. Lin, H. X. Jiang, M. Asif-khan, and Q. Chen, Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure, Journal of Applied Physics, vol.82, issue.3, pp.1227-1230, 1997.

A. P. Goetzberger and R. M. Scarlett, RESEARCH AND INVESTIGATION OF INVERSE EPITAXIAL UHF POWER TRANSISTORS, 1964.

J. ?ik, J. Hora, and J. Huml???ek, Optical functions of silicon at high temperatures, Journal of Applied Physics, vol.84, issue.11, pp.6291-6298, 1998.

K. Luke, Y. Okawachi, M. R. Lamont, A. L. Gaeta, and M. Lipson, Broadband mid-infrared frequency comb generation in a Si_3N_4 microresonator, Optics Letters, vol.40, issue.21, p.4823, 2015.

J. Pastr?ák and L. Roskovcová, Refraction Index Measurements on AlN Single Crystals, physica status solidi (b), vol.14, issue.1, pp.K5-K8, 1966.

A. S. Barker and M. Ilegems, Infrared Lattice Vibrations and Free-Electron Dispersion in GaN, Physical Review B, vol.7, issue.2, pp.743-750, 1973.

A. A. Istratov and O. F. Vyvenko, Exponential analysis in physical phenomena, Review of Scientific Instruments, vol.70, issue.2, pp.1233-1257, 1999.

M. Meneghini, A. Tajalli, P. Moens, A. Banerjee, E. Zanoni et al., Trapping phenomena and degradation mechanisms in GaN-based power HEMTs, Materials Science in Semiconductor Processing, vol.78, pp.118-126, 2018.

A. Y. Polyakov and I. Lee, Deep traps in GaN-based structures as affecting the performance of GaN devices, Materials Science and Engineering: R: Reports, vol.94, pp.1-56, 2015.

A. Y. Polyakov, N. B. Smirnov, I. Lee, and S. J. Pearton, Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol.33, issue.6, p.061203, 2015.

A. Sasikumar, A. R. Arehart, S. Martin-horcajo, M. F. Romero, Y. Pei et al., Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy, Applied Physics Letters, vol.103, issue.3, p.033509, 2013.

O. Mitrofanov and M. Manfra, Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors, Superlattices and Microstructures, vol.34, issue.1-2, pp.33-53, 2003.

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, I. Lee, T. Jang et al., Current relaxation analysis in AlGaN/GaN high electron mobility transistors, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol.35, issue.1, p.011207, 2017.

G. Kompa, Zwei Neuerscheinungen bei Kassel University Press, Bautechnik, vol.78, issue.11, pp.831-831, 2001.

A. V. Knyazev, Q. Gao, and K. H. Teo, Multi-exponential Lifetime Extraction in Time-Logarithmic Scale, Advances in Data Mining. Applications and Theoretical Aspects, pp.282-296, 2016.

J. Hadamard, Les problèmes aux limites dans la théorie des équations aux dérivées partielles, Journal de Physique Théorique et Appliquée, vol.6, issue.1, pp.202-241, 1907.

A. Ranganathan, The Levenberg-Marquardt Algorithm, p.5

K. Levenberg, A method for the solution of certain non-linear problems in least squares, Quarterly of Applied Mathematics, vol.2, issue.2, pp.164-168, 1944.

D. W. Marquardt, An Algorithm for Least-Squares Estimation of Nonlinear Parameters, Journal of the Society for Industrial and Applied Mathematics, vol.11, issue.2, pp.431-441, 1963.

J. Nocedal and S. Wright, Numerical Optimization, Numerical Optimization, 1999.

M. Tapajna, R. J. Simms, Y. Pei, U. K. Mishra, and M. Kuball, Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress, IEEE Electron Device Letters, vol.31, issue.7, pp.662-664, 2010.

A. N. Tikhonov, Solution of Incorrectly Formulated Problems and the Regularization Method, Sov. Math Dokl, vol.5, pp.1035-1038, 1963.

A. N. Tikhonov and V. Y. Arsenin, Solutions of ill-posed problems

J. Wiley, , 1977.

S. W. Provencher, CONTIN: A general purpose constrained regularization program for inverting noisy linear algebraic and integral equations, Comput. Phys. Commun, vol.27, issue.3, pp.90174-90180, 1982.

J. Morimoto, M. Fudamoto, S. Tashiro, M. Arai, T. Miyakawa et al., Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS) of Deep Centers in CdTe Single Crystals, Japanese Journal of Applied Physics, vol.27, issue.Part 1, No. 12, pp.2256-2259, 1988.

M. Fudamoto, K. Tahira, J. Morimoto, and T. Miyakawa, Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS) of DX-centers in AlxGa1-xAs:Sn, Japanese Journal of Applied Physics, vol.27, issue.Part 1, No. 5, pp.738-745, 1988.

L. Dobaczewski, P. Kaczor, M. Missous, A. R. Peaker, and Z. R. Zytkiewicz, Structure of theDXstate formed by donors in (Al,Ga)As and Ga(As,P), Journal of Applied Physics, vol.78, issue.4, pp.2468-2477, 1995.

D. Batovski and C. Hardalov, Two?dimensional approach for solving the inverse problem for deep level transient spectroscopy, Journal of Applied Physics, vol.78, issue.3, pp.1808-1811, 1995.

R. , The Integrated Bayes/Likelihood Approach, Statistical Inference, pp.21-68, 2010.

J. Vanderplas, Frequentism and Bayesianism: A Python-driven Primer, Proceedings of the 13th Python in Science Conference, 2014.

D. D. Walling, Numerical methods for non-linear least squares curve fitting

D. Bisi, M. Meneghini, C. De-santi, A. Chini, M. Dammann et al., Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements, IEEE Transactions on Electron Devices, vol.60, issue.10, pp.3166-3175, 2013.

P. Stallinga and H. L. Gomes, Trap states as an explanation for the Meyer?Neldel rule in semiconductors, Organic Electronics, vol.6, issue.3, pp.137-141, 2005.

E. J. Meijer, M. Matters, P. T. Herwig, D. M. De-leeuw, and T. M. Klapwijk, The Meyer?Neldel rule in organic thin-film transistors, Applied Physics Letters, vol.76, issue.23, pp.3433-3435, 2000.

F. Abdel-wahab and A. Yelon, Meyer-Neldel rule and Poole-Frenkel effect in chalcogenide glasses, Journal of Applied Physics, vol.114, issue.2, p.023707, 2013.