Skip to Main content Skip to Navigation
Theses

Caractérisation des mécanismes de défaillance des transistors de puissance en GaN en régime de commutation

Manuel Antero Gonzalez Sentis 1
1 LAAS-ESE - Équipe Énergie et Systèmes Embarqués
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : Power-GaN-HEMT is the up-and-coming device in space applications. Gallium nitride tolerates higher operational temperatures than silicon, and it is an inherently radiation-hard material. In addition, GaN-based transistors offer remarkable performances for power switching energy converters like low on-resistance and high power densities compared to silicon-based devices. Furthermore, due to its higher switching frequency, smaller and lighter power converters can be conceived in as much the value of passive devices can be reduced when operating at higher frequencies. Notwithstanding all these advantages, the use of large-scale power-GaN-HEMTs remains limited due to the lack of awareness of the reliability of these components with aging. These components have physical effects that were not found in silicon power transistors and that must be taken into account when studying these components. Indeed, the conventional tests that we use today for silicon power transistors do not manage to cover all the requirements of HEMT power in GaN, especially the trapping effects. We carried out an analysis of this technology, in order to study the failure mechanisms and the technological bottle-neck which slow down the deployment of power-GaN-HEMT. We have explored methods to measure the trapping effects in order to complete conventional tests that are used today to characterize power transistors. A power-cycling bench has been designed to study the degradation and the trapping effects with the aging in switching regime. Finally, we carried out radiation tests in order to study the power-GaN-HEMT suitability for space applications.
Complete list of metadata

https://hal.laas.fr/tel-03176005
Contributor : Laas Hal-Laas <>
Submitted on : Monday, March 22, 2021 - 9:27:10 AM
Last modification on : Thursday, June 10, 2021 - 3:06:19 AM

File

GONZÁLEZ-SENTIS Manuel.pdf
Files produced by the author(s)

Identifiers

  • HAL Id : tel-03176005, version 1

Citation

Manuel Antero Gonzalez Sentis. Caractérisation des mécanismes de défaillance des transistors de puissance en GaN en régime de commutation. Micro et nanotechnologies/Microélectronique. Institut National des Sciences Appliquées de Toulouse, 2020. Français. ⟨tel-03176005⟩

Share

Metrics

Record views

54

Files downloads

58