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Diamond Schottky diodes operating at 473 K

Abstract : In this paper, we present current-voltage characteristics of vertical and pseudo-vertical Diamond Schottky diodes operating up to 473 K. The functionality rate is greater than 75% for each samples. For vertical diodes, current density at 473 K reaches 488 A/cm², while it is greater than 1000 A/cm² for pseudo-vertical diodes. Under reverse bias, the leakage current is less than 10−7 A/cm² at 50 V for all functional diodes. However, the high barrier height and high non-ideality factor observed are probably caused by high charges at the Diamond/Schottky contact interface. This article emphasizes the high reproducibility of the characteristics and the functionality rate at 473 K.
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https://hal.laas.fr/hal-01618095
Contributor : Richard Monflier <>
Submitted on : Tuesday, October 17, 2017 - 2:27:20 PM
Last modification on : Wednesday, June 9, 2021 - 10:00:32 AM
Long-term archiving on: : Thursday, January 18, 2018 - 2:38:59 PM

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Richard Monflier, Karine Isoird, Alain Cazarré, Josiane Tasselli, Alexandra Servel, et al.. Diamond Schottky diodes operating at 473 K. EPE Journal - European Power Electronics and Drives, Taylor & Francis, 2017, 27 (3), pp.118-124. ⟨10.1080/09398368.2017.1388625⟩. ⟨hal-01618095⟩

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