New triggering-speed-characterization method for diode-triggered SCR using TLP

Mouna Mahane 1 David Trémouilles 1 Marise Bafleur 2 Benjamin Thon 3 Marianne Diatta 1 Lionel Jaouen 3
1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
LAAS - Laboratoire d'analyse et d'architecture des systèmes [Toulouse]
2 LAAS-ESE - Équipe Énergie et Systèmes Embarqués
LAAS - Laboratoire d'analyse et d'architecture des systèmes [Toulouse]
Abstract : The key parameters in the optimization of the Diode Triggered Silicon-Controlled Rectifier (DTSCR) as a RF ESD protection, are the turn-on time and the trigger-voltage overshoots seen before the SCR turns on, during very fast ESD transients [1]. But at this time, there is no normalized method to evaluate and report the ESD device turn-on speed [2]. Such a method would be required to effectively compare device performance. In this work a new method , based on stored-charge, is investigated to characterize the triggering speed of DTSCR using Transmission Line Pulsing (TLP) measurements.
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Journal articles
Microelectronics Reliability, Elsevier, 2017, 76-77, pp.692 - 697. 〈10.1016/j.microrel.2017.07.063〉
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Mouna Mahane, David Trémouilles, Marise Bafleur, Benjamin Thon, Marianne Diatta, et al.. New triggering-speed-characterization method for diode-triggered SCR using TLP. Microelectronics Reliability, Elsevier, 2017, 76-77, pp.692 - 697. 〈10.1016/j.microrel.2017.07.063〉. 〈hal-01643028〉

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