 |
HAL-LAAS Open Archive Laboratory for Analysis and Architecture of Systems |  |
Journal articles
New triggering-speed-characterization method for diode-triggered SCR using TLP
Abstract : The key parameters in the optimization of the Diode Triggered Silicon-Controlled Rectifier (DTSCR) as a RF ESD protection, are the turn-on time and the trigger-voltage overshoots seen before the SCR turns on, during very fast ESD transients [1]. But at this time, there is no normalized method to evaluate and report the ESD device turn-on speed [2]. Such a method would be required to effectively compare device performance. In this work a new method , based on stored-charge, is investigated to characterize the triggering speed of DTSCR using Transmission Line Pulsing (TLP) measurements.
Cited literature [8 references]
https://hal.laas.fr/hal-01643028
Contributor : David Trémouilles <>
Submitted on : Tuesday, November 21, 2017 - 6:56:18 AM
Last modification on : Thursday, June 10, 2021 - 3:02:21 AM
Contributor : David Trémouilles <>
Submitted on : Tuesday, November 21, 2017 - 6:56:18 AM
Last modification on : Thursday, June 10, 2021 - 3:02:21 AM
File
Mahane et al. - 2017 - New tri...
Files produced by the author(s)