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Electron spin polarization in GaAsBi quantum wells: Temperature dependence

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https://hal.laas.fr/hal-01947288
Contributor : Chantal Fontaine <>
Submitted on : Thursday, December 6, 2018 - 4:04:54 PM
Last modification on : Monday, October 5, 2020 - 2:24:16 PM

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  • HAL Id : hal-01947288, version 1

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Sawsen Azaizia, Andrea Balocchi, Delphine Lagarde, Alexandre Arnoult, Chantal Fontaine, et al.. Electron spin polarization in GaAsBi quantum wells: Temperature dependence. 8th International Workshop on Bismuth-Containing Semiconductors, Prof. Kirstin Volz, Jul 2017, Marburg, Germany. ⟨hal-01947288⟩

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