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On the Bi diffusion from (001) GaAsBi−GaAs quantum wells during high temperature annealing

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https://hal.laas.fr/hal-01947318
Contributor : Chantal Fontaine <>
Submitted on : Thursday, December 6, 2018 - 4:27:32 PM
Last modification on : Monday, October 5, 2020 - 2:46:27 PM

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  • HAL Id : hal-01947318, version 1

Citation

Alexandre Arnoult, Aurélien Kuck, Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, et al.. On the Bi diffusion from (001) GaAsBi−GaAs quantum wells during high temperature annealing. 5th international workshop on bismuth−containing semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland. ⟨hal-01947318⟩

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