Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: investigation of interfacial and structural properties

Abstract : Aluminium oxide (Al2O3) films were deposited on silicon substrates using plasma-enhanced atomic layer deposition (PE-ALD) technique with tri-methyl-aluminium TMA (Al(CH3)3) and dioxygen (O2) as precursors. PE-ALD experiments were performed in order to (i) investigate the interfacial properties between the silicon substrate and the alumina layer, and (ii) understand the impact of growth and crystallization phenomena on the Al2O3 films properties (structural, optical, mechanical, dielectric and etch). The formation of oxide-based transition layers, either silicon oxide SiO2 and/or aluminosilicate AlxSiyO, was evidenced for the TMA/O2 PE-ALD process. Based on these results, it appears that no substrate-enhanced growth occurs at the early stages of the growth process, as assumed in previous reports. Thus, constant growth rate (0.08 nm per cycle) and refractive index (1.64 at a 450 nm wavelength) were obtained for the Al2O3 layer deposited at 300°C. Finally, thermal annealing experiments were performed on these films, evidencing the influences of atomic structural rearrangement and crystallization on the Al2O3 film main characteristics: interface steepness, atomic structure, refractive index, residual stress, dielectric constant and etch rate.
Complete list of metadatas

Cited literature [46 references]  Display  Hide  Download

https://hal.laas.fr/hal-02043421
Contributor : Pierre Temple-Boyer <>
Submitted on : Thursday, February 21, 2019 - 8:25:10 AM
Last modification on : Thursday, January 16, 2020 - 3:18:09 PM
Long-term archiving on: Wednesday, May 22, 2019 - 12:22:26 PM

File

manuscript_TSF-ALDAl2O3_vf.pdf
Files produced by the author(s)

Identifiers

Citation

Ahmet Lale, Emmanuel Scheid, Fuccio Cristiano, Lucien Datas, Benjamin Reig, et al.. Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: investigation of interfacial and structural properties. Thin Solid Films, Elsevier, 2018, 666, pp.20 - 27. ⟨10.1016/j.tsf.2018.09.028⟩. ⟨hal-02043421⟩

Share

Metrics

Record views

85

Files downloads

688