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New Technological advances for microshielded coplanar circuits on silicon

Abstract : An advanced technological process for microwave coplanar circuits on silicon oxide/nitride membrane is presented. This process allows to make thick conductors with high geometric definition. Furthermore, it permits to realise microshielded circuits with minimised losses in the access ports.
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https://hal.laas.fr/hal-02170319
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  • HAL Id : hal-02170319, version 1

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E Saint Etienne, G Blasquez, Patrick Pons, Robert Plana, C Douziech, et al.. New Technological advances for microshielded coplanar circuits on silicon. Micro Mechanics Europe (MME1999), Sep 1999, Gif-sur-Yvette, France. pp.109-111. ⟨hal-02170319⟩

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