Composition modulation by twinning in InAsSb nanowires Composition modulation by twinning in InAsSb nanowires - Archive ouverte HAL Access content directly
Journal Articles Nanotechnology Year : 2019

Composition modulation by twinning in InAsSb nanowires Composition modulation by twinning in InAsSb nanowires

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Abstract

We observe a composition modulated axial heterostructure in zincblende (ZB) InAs 0.90 Sb 0.10 nanowires initiated by pseudo-periodic twin boundaries using scanning tunneling microscopy. The twin boundaries exhibit four planes with reduced Sb concentration due to a lower Sb incorporation during lateral overgrowth of a 4H wurtzite as compared to a ZB stacking sequence. We anticipate that this leads to compositional band offsets in addition to known structural band offsets present between 4H and ZB polytypes, changing the band alignment from type II to type I.
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Dates and versions

hal-02332273 , version 1 (29-10-2019)

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Cite

M. Schnedler, T Xu, V Portz, J-P Nys, S.R. Plissard, et al.. Composition modulation by twinning in InAsSb nanowires Composition modulation by twinning in InAsSb nanowires. Nanotechnology, 2019, 30 (32), ⟨10.1088/1361-6528/aaf9ce⟩. ⟨hal-02332273⟩
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