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Composition modulation by twinning in InAsSb nanowires Composition modulation by twinning in InAsSb nanowires

Abstract : We observe a composition modulated axial heterostructure in zincblende (ZB) InAs 0.90 Sb 0.10 nanowires initiated by pseudo-periodic twin boundaries using scanning tunneling microscopy. The twin boundaries exhibit four planes with reduced Sb concentration due to a lower Sb incorporation during lateral overgrowth of a 4H wurtzite as compared to a ZB stacking sequence. We anticipate that this leads to compositional band offsets in addition to known structural band offsets present between 4H and ZB polytypes, changing the band alignment from type II to type I.
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https://hal.laas.fr/hal-02332273
Contributor : Sébastien Plissard <>
Submitted on : Tuesday, October 29, 2019 - 9:20:26 AM
Last modification on : Wednesday, June 9, 2021 - 10:00:24 AM

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M. Schnedler, T Xu, V Portz, J-P Nys, S.R. Plissard, et al.. Composition modulation by twinning in InAsSb nanowires Composition modulation by twinning in InAsSb nanowires. Nanotechnology, Institute of Physics, 2019, 30 (32), ⟨10.1088/1361-6528/aaf9ce⟩. ⟨hal-02332273⟩

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