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Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs

Abstract : A new normally-off AlGaN/GaN HEMT structure is proposed. The regrowth of a P-GaN layer on the AlGaN/GaN heterostructure after the gate recess allows the achievement of the enhancement mode. A shift in the threshold voltage to positive values has been proved through simulation results. A precise control of the etch depth for the gate recess is detailed.
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https://hal.laas.fr/hal-02922723
Contributor : Chaymaa Haloui <>
Submitted on : Tuesday, September 1, 2020 - 1:43:47 PM
Last modification on : Thursday, June 10, 2021 - 3:02:23 AM
Long-term archiving on: : Wednesday, December 2, 2020 - 12:24:02 PM

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  • HAL Id : hal-02922723, version 1

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Chaymaa Haloui, Toulon Gaëtan, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, et al.. Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs. 28 International Conference MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, Jun 2020, Wroclow, Poland. ⟨hal-02922723⟩

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