Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si 1−x Ge x /Si epilayers - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly
Journal Articles Applied Surface Science Year : 2020

Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si 1−x Ge x /Si epilayers

Abstract

30 nm-thick pseudomorphic Si1-xGex layers with Ge concentrations x ranging from 0 to 0.4 were submitted to Ultraviolet Nanosecond Laser Annealing (UV-NLA). The impact of UV-NLA on the various regimes and on the layer crystallinity was assessed for each Ge concentration. This study highlighted the existence of four annealing regimes, with notably a surface melt regime with isolated molten islands on the surface. The strain in the layer depended on the liquid/solid interface roughness and on the stored elastic energy in the layers. In the case of smooth liquid/solid interfaces, a limit for perfect recrystallization was estimated near 750 mJ/m².
Fichier principal
Vignette du fichier
2020_ASS_SiGe_laser_Dagault_submitted.pdf (3.06 Mo) Télécharger le fichier
Origin : Files produced by the author(s)
Loading...

Dates and versions

hal-02983939 , version 1 (30-10-2020)

Identifiers

Cite

L. Dagault, S. Kerdilès, P Acosta-Alba, J.-M. Hartmann, J.-P. Barnes, et al.. Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si 1−x Ge x /Si epilayers. Applied Surface Science, 2020, 527, pp.146752. ⟨10.1016/j.apsusc.2020.146752⟩. ⟨hal-02983939⟩
53 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More