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Implant heating contribution to amorphous layer formation: a KMC approach

Abstract : The present work investigates the influence of implantation induced heating on the amorphization profile in silicon wafer. A simulation approach based on a Kinetic Monte Carlo method is compared to experimental implantations and characterizations. We demonstrate that a backside pressure cooling can be used to tune amorphous layer thickness.
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https://hal.laas.fr/hal-03095123
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Submitted on : Monday, January 4, 2021 - 3:23:17 PM
Last modification on : Thursday, June 10, 2021 - 3:02:03 AM
Long-term archiving on: : Monday, April 5, 2021 - 8:40:49 PM

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P.L. Julliard, P. Dumas, F. Monsieur, F. Hilario, D. Rideau, et al.. Implant heating contribution to amorphous layer formation: a KMC approach. 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.43-46, ⟨10.23919/SISPAD49475.2020.9241608⟩. ⟨hal-03095123⟩

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