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Undoped SiGe material calibration for numerical nanosecond laser annealing simulations

Abstract : Physical parameters calibration (dielectric and alloy properties) of Si1-XGeX alloys is presented in order to simulate the Ultra Violet-Nanosecond Laser Annealing (UV-NLA) of this material for Si/ Si1-XGeX based MOS devices. Optical and physical parameters are extracted and modeled from experimental characterizations for several Ge concentrations and then fitted to match experimental laser annealing results. A good prediction, in terms of melt depth and melting duration, is achieved for different Ge concentrations between 20 and 40%, usually encountered in Si1-XGeX CMOS integration process.
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https://hal.laas.fr/hal-03097960
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Submitted on : Monday, January 25, 2021 - 11:53:41 PM
Last modification on : Wednesday, June 9, 2021 - 10:00:23 AM
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Anne-Sophie Royet, L. Dagault, Sebastien Kerdiles, Pablo Acosta Alba, J.P Barnes, et al.. Undoped SiGe material calibration for numerical nanosecond laser annealing simulations. SISPAD International Conference on Simulation of Semiconductor Processes and Devices, Sep 2020, VIRTUAL CONFERENCE, Japan. ⟨10.23919/SISPAD49475.2020.9241664⟩. ⟨hal-03097960⟩

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