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Journal articles
Investigation of Oxygen penetration during UV Nanosecond Laser Annealing of Silicon at high energy densities
Richard Monflier
1
Toshiyuki Tabata
2
Hiba Rizk
1
Julien Roul
3
Karim Huet
2
Fulvio Mazzamuto
2
Pablo Acosta Alba
4
Sebastien Kerdiles
4
Simona Boninelli
5
Antonino La Magna
5
Emmanuel Scheid
1
Fuccio Cristiano
1
Eléna Bedel-Pereira
1
1
LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique
LAAS - Laboratoire d'analyse et d'architecture des systèmes
3
LAAS-I2C - Service Instrumentation Conception Caractérisation
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Richard Monflier 1
Author IdHAL : richard-monflier
Toshiyuki Tabata 2
Author
Hiba Rizk 1
Author Employer institution : Équipe Intégration de Systèmes de Gestion de l'Énergie
Julien Roul 3
Author
Karim Huet 2
Author
Fulvio Mazzamuto 2
Author
Pablo Acosta Alba 4
Author
Sebastien Kerdiles 4
Author
Simona Boninelli 5
Author
Antonino La Magna 5
Author
Emmanuel Scheid 1
Author Employer institution : Centre National de la Recherche Scientifique
Fuccio Cristiano 1
Author Employer institution : Équipe Matériaux et Procédés pour la Nanoélectronique IdHAL : fuccio-cristiano
Eléna Bedel-Pereira 1
Author Employer institution : Équipe Matériaux et Procédés pour la Nanoélectronique IdHAL : bedel-pereira-elena
1
LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique (France)
- LAAS - Laboratoire d'analyse et d'architecture des systèmes (7 Av du colonel Roche 31077 TOULOUSE CEDEX 4 - France)
- Toulouse INP - Institut National Polytechnique (Toulouse) (France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- INSA Toulouse - Institut National des Sciences Appliquées - Toulouse (135, avenue de Rangueil - 31077 Toulouse cedex 4 - France)
- UT3 - Université Toulouse III - Paul Sabatier (118 route de Narbonne - 31062 Toulouse - France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- CNRS - Centre National de la Recherche Scientifique : UPR8001 (France)
- UT1 - Université Toulouse 1 Capitole (2 rue du Doyen-Gabriel-Marty - 31042 Toulouse Cedex 9 - France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- UT2J - Université Toulouse - Jean Jaurès (5 allées Antonio Machado - 31058 Toulouse Cedex 9 - France)
- Toulouse INP - Institut National Polytechnique (Toulouse) (France)
2
LASSE - Laser Systems and Solutions of Europe (5Laser Systems and Solutions of Europe (LASSE), SCREEN Semiconductor Solutions,
Co., Ltd., 14-38 Rue Alexandre, 92230 Gennevilliers, France - France)
3
LAAS-I2C - Service Instrumentation Conception Caractérisation (France)
- LAAS - Laboratoire d'analyse et d'architecture des systèmes (7 Av du colonel Roche 31077 TOULOUSE CEDEX 4 - France)
- Toulouse INP - Institut National Polytechnique (Toulouse) (France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- INSA Toulouse - Institut National des Sciences Appliquées - Toulouse (135, avenue de Rangueil - 31077 Toulouse cedex 4 - France)
- UT3 - Université Toulouse III - Paul Sabatier (118 route de Narbonne - 31062 Toulouse - France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- CNRS - Centre National de la Recherche Scientifique : UPR8001 (France)
- UT1 - Université Toulouse 1 Capitole (2 rue du Doyen-Gabriel-Marty - 31042 Toulouse Cedex 9 - France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- UT2J - Université Toulouse - Jean Jaurès (5 allées Antonio Machado - 31058 Toulouse Cedex 9 - France)
- Toulouse INP - Institut National Polytechnique (Toulouse) (France)
5
CNR - Catania (France)
Abstract : In this work, we present a comprehensive investigation of impurities contamination in silicon during UV Nanosecond Laser Annealing at high energy density. By investigating in detail the impact of the annealing ambient and of the surface preparation prior to UV-NLA (including the variation of the surface oxide thickness), we show that the observed oxygen penetration originates from the surface oxide layer. It is proposed that, at high energy UV-NLA, the prolonged contact of SiO2 with high temperature liquid Si induces a partial degradation of the SiO2/Si interface, leading to bond breaking and subsequent injection of O atoms into the substrate. A degradation involving less than 5 % of the O atoms contained in the 1 st SiO2 ML is sufficient to account for the measured amount of in-diffused O in all of the analysed samples.
Document type :
Journal articles
Complete list of metadata
https://hal.laas.fr/hal-03098053
Contributor : Fuccio Cristiano <>
Submitted on : Tuesday, January 5, 2021 - 3:53:57 PM
Last modification on : Wednesday, June 9, 2021 - 10:00:25 AM
Long-term archiving on: : Wednesday, April 7, 2021 - 9:28:01 AM
Contributor : Fuccio Cristiano <>
Submitted on : Tuesday, January 5, 2021 - 3:53:57 PM
Last modification on : Wednesday, June 9, 2021 - 10:00:25 AM
Long-term archiving on: : Wednesday, April 7, 2021 - 9:28:01 AM
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Identifiers
- HAL Id : hal-03098053, version 1
- DOI : 10.1016/j.apsusc.2021.149071
Collections
LAAS | LAAS-I2C | LAAS-MICRO-NANO-BIO-TECHNOLOGIES | LAAS-MPN | UNIV-TLSE3 | UT1-CAPITOLE | CEA | UNIV-TLSE2 | INSA-TOULOUSE | CNRS | INSA-GROUPE
Citation
Richard Monflier, Toshiyuki Tabata, Hiba Rizk, Julien Roul, Karim Huet, et al.. Investigation of Oxygen penetration during UV Nanosecond Laser Annealing of Silicon at high energy densities. Applied Surface Science, Elsevier, 2021, 536, pp.149071. ⟨10.1016/j.apsusc.2021.149071⟩. ⟨hal-03098053⟩
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