Skip to Main content Skip to Navigation
Journal articles

Investigation of Oxygen penetration during UV Nanosecond Laser Annealing of Silicon at high energy densities

Richard Monflier 1 Toshiyuki Tabata 2 Hiba Rizk 1 Julien Roul 3 Karim Huet 2 Fulvio Mazzamuto 2 Pablo Acosta Alba 4 Sebastien Kerdiles 4 Simona Boninelli 5 Antonino La Magna 5 Emmanuel Scheid 1 Fuccio Cristiano 1 Eléna Bedel-Pereira 1
1 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique
LAAS - Laboratoire d'analyse et d'architecture des systèmes
2 LASSE - Laser Systems and Solutions of Europe
3 LAAS-I2C - Service Instrumentation Conception Caractérisation
LAAS - Laboratoire d'analyse et d'architecture des systèmes
4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
5 CNR - Catania
Abstract : In this work, we present a comprehensive investigation of impurities contamination in silicon during UV Nanosecond Laser Annealing at high energy density. By investigating in detail the impact of the annealing ambient and of the surface preparation prior to UV-NLA (including the variation of the surface oxide thickness), we show that the observed oxygen penetration originates from the surface oxide layer. It is proposed that, at high energy UV-NLA, the prolonged contact of SiO2 with high temperature liquid Si induces a partial degradation of the SiO2/Si interface, leading to bond breaking and subsequent injection of O atoms into the substrate. A degradation involving less than 5 % of the O atoms contained in the 1 st SiO2 ML is sufficient to account for the measured amount of in-diffused O in all of the analysed samples.
Document type :
Journal articles
Complete list of metadata
https://hal.laas.fr/hal-03098053
Contributor : Fuccio Cristiano Connect in order to contact the contributor
Submitted on : Tuesday, January 5, 2021 - 3:53:57 PM
Last modification on : Tuesday, October 19, 2021 - 11:18:10 PM
Long-term archiving on: : Wednesday, April 7, 2021 - 9:28:01 AM

File

Vignette du document
Oxygen_laser annealing_submitt...
Files produced by the author(s)

Identifiers

Collections

LAAS | LAAS-I2C | LAAS-MICRO-NANO-BIO-TECHNOLOGIES | LAAS-MPN | UNIV-TLSE3 | UT1-CAPITOLE | CEA | UNIV-TLSE2 | INSA-TOULOUSE | CNRS | INSA-GROUPE

Citation

Richard Monflier, Toshiyuki Tabata, Hiba Rizk, Julien Roul, Karim Huet, et al.. Investigation of Oxygen penetration during UV Nanosecond Laser Annealing of Silicon at high energy densities. Applied Surface Science, Elsevier, 2021, 536, pp.149071. ⟨10.1016/j.apsusc.2021.149071⟩. ⟨hal-03098053⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Les métriques sont temporairement indisponibles