Towards near-zero-power logic gates based on capacitive MEMS devices operating in adiabatic regime
Abstract
We introduce an architecture of logic gates based on capacitive MEMS devices in a differential architecture, operated in the adiabatic regime and aiming at reaching ultra-low power operation. The tunable capacitances, which are the fundamental component of our MEMS devices are realized using comb-drive actuators. Their design was a result of an extensive FEM analysis and had to satisfy criteria for sufficient logic differentiation and cascadability of individual gates. Microfabrication tests were performed on silicon wafers as optimization of the fabrication process for the realization of full logic gates on SOI wafers.
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