Spectrally-shaped illumination for improved optical monitoring of lateral III-V-semiconductor oxidation - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Accéder directement au contenu
Article Dans Une Revue Optics Express Année : 2023

Spectrally-shaped illumination for improved optical monitoring of lateral III-V-semiconductor oxidation

Natan Monvoisin
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Elizabeth Hemsley
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Lucas Laplanche
Guilhem Almuneau
Stéphane Calvez
Antoine Monmayrant

Résumé

We report an hyperspectral imaging microscopy system based on a spectrally-shaped illumination and its use to offer an enhanced in-situ inspection of a technological process that is critical in Vertical-Cavity Surface-Emitting Laser (VCSEL) manufacturing, the lateral III-V-semiconductor oxidation (AlOx). The implemented illumination source exploits a digital micromirror device (DMD) to arbitrarily tailor its emission spectrum. When combined to an imager, this source is shown to provide an additional ability to detect minute surface reflectance contrasts on any VCSEL or AlOx-based photonic structure and, in turn, to offer improved in-situ inspection of the oxide aperture shapes and dimensions down to the best-achievable optical resolution. The demonstrated technique is very versatile and could be readily extended to the real-time monitoring of oxidation or other semiconductor technological processes as soon as they rely on a real-time yet accurate measurement of spatio-spectral (reflectance) maps.
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Dates et versions

hal-04065260 , version 1 (11-04-2023)

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Natan Monvoisin, Elizabeth Hemsley, Lucas Laplanche, Guilhem Almuneau, Stéphane Calvez, et al.. Spectrally-shaped illumination for improved optical monitoring of lateral III-V-semiconductor oxidation. Optics Express, 2023, 31 (8), pp.12955. ⟨10.1364/OE.480753⟩. ⟨hal-04065260⟩
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