In this article we introduce a new method for designing robust low noise amplifier (LNA) using wide bandgap GaN MMIC technology. The objective of this work is to compare different design strategies, which manages the combination of optimum noise figure with high linearity. This article compares two conventional design strategies to design GaN LNAs, as proposed in the literature, with a new one allowing the reconfigurability of the LNA. If the classical methods are based on the selection of the active device for a targeted noise figure and its associated compression point, this work proposes an alternative design option that allows to change the noise figure and the linearity performances by applying dedicated DC biasing conditions to the transistor. Then, a comparison is performed for three different LNA design strategies, that are presented and discussed. It is demonstrated that the proposed reconfigurable LNA achieves the best NF results under nominal biasing conditions, while it can be tuned (by changing its biasing DC voltage) to improve its linearity and to avoid the loss of the signal under possible electromagnetic aggression. The new proposed LNA is simulated with noise figure better than 0.8 dB for a small signal gain higher than 9.5 dB over the 8-11 GHz frequency band, and with an input compression point (P1dB) as high as 21.3 dBm.